AP9974GP-HF Datasheet PDF - Advanced Power Electronics

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AP9974GP-HF
Advanced Power Electronics

Part Number AP9974GP-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP9974GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
D
Single Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9974GP) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
G
DS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
EAS
TSTG
TJ
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
60
+20
72
46
300
104
0.8
45
-55 to 150
-55 to 150
60V
12mΩ
72A
TO-263(S)
TO-220(P)
Units
V
V
A
A
A
W
W/
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.2
40
62
Units
/W
/W
/W
1
201109272
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AP9974GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=60V, VGS=0V
VGS=+20V, VDS=0V
ID=30A
VDS=48V
VGS=4.5V
VDS=30V
ID=30A
RG=3.3Ω
VGS=10V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
60 - - V
- 0.07 - V/
- - 12 m
- - 15 m
1 - 3V
- 50 -
S
- - 10 uA
- - +100 nA
- 43 69 nC
- 8 - nC
- 31 - nC
- 14 - ns
- 48 - ns
- 42 - ns
- 67 - ns
- 3180 5100 pF
- 495 - pF
- 460 - pF
- 1 1.5 Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 45 - ns
- 40 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Starting Tj=25oC, L=0.1mH , RG=25Ω , IAS=30A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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250
T C =25 o C
200
10V
7.0V
150
5.0V
100 4.5V
50
V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20
I D = 30 A
T C =25 o C
16
12
8
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T j =150 o C
10
T j =25 o C
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
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AP9974GS/P-HF
125
10V
100
T C = 150 o C
7.0V
5.0V
4.5V
75
50
25 V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.8
1.2
0.6
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP9974GS/P-HF
12
I D = 35 A
10
V DS = 30 V
8 V DS = 38 V
V DS = 48 V
6
4
2
0
0 20 40 60 80
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
100us
1ms
10
10ms
T C =25 o C
Single Pulse
100ms
DC
1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
125
V DS =5V
100
T j =25 o C
75
T j =150 o C
50
25
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
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AP9974GP-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9974GP-HF
Advanced Power Electronics
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