AP9974GH-HF Datasheet PDF - Advanced Power Electronics

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AP9974GH-HF
Advanced Power Electronics

Part Number AP9974GH-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP9974GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Fast Switching Performance
RoHS Compliant & Halogen-Free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9974GJ) are
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
60V
10.5mΩ
74A
GDS
TO-252(H)
G
D
S
TO-251(J)
Rating
60
+20
74
48
300
104
0.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
1.2
62.5
110
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200908202



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AP9974GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=250uA
VGS=10V, ID=45A
VGS=4.5V, ID=30A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=30A
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
Gate-Source Leakage
VGS=+20V, VDS=0V
Total Gate Charge2
ID=30A
Gate-Source Charge
VDS=48V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=30V
Rise Time
ID=30A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=1Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
60 - - V
- - 10.5 m
- - 15 m
1 - 3V
- 50 -
S
- - 10 uA
- - 250 uA
- - +100 nA
- 43 69 nC
- 8 - nC
- 31 - nC
- 14 - ns
- 48 - ns
- 42 - ns
- 67 - ns
- 3180 5100 pF
- 495 - pF
- 460 - pF
- 1 1.5
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 45 - ns
- 40 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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250
T C =25 o C
200
150
100
10V
7 .0V
5.0V
4.5V
50 V G =3.0V
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
12
I D = 30 A
T C =25 o C
10
8
6
4
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
50
40
T j =150 o C
T j =25 o C
30
20
10
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP9974GH/J-HF
120
T C =150 o C
100
80
10 V
7 .0V
5.0 V
4.5 V
60
40
V G = 3.0 V
20
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D = 45 A
V G =10V
1.6
1.2
0.8
trr
0.4
Q-50 0
50 100 150
rr
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



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AP9974GH/J-HF
14
I D = 30 A
12
V DS = 30 V
10 V DS = 38 V
V DS = 48 V
8
6
4
2
0
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
Operation in this area
100 limited by RDS(ON)
100us
10
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
100
V DS =5V T j =25 o C
80
T j =150 o C
60
40
20
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
Q0.1 1
rr
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4



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