AP95T06GP-HF Datasheet PDF - Advanced Power Electronics

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AP95T06GP-HF
Advanced Power Electronics

Part Number AP95T06GP-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP95T06GS/P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP95T06GP) are
available for low-profile applications.
BVDSS
RDS(ON)
ID
GD
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy4
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
60
+20
75
66
260
138
1.11
450
30
-55 to 150
-55 to 150
60V
8.5mΩ
75A
TO-263(S)
TO-220(P)
Units
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)5
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.9
40
62
Units
/W
/W
/W
Data and specifications subject to change without notice
1
201108053



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AP95T06GS/P-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
ΔBVDSS/ΔTj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=20A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=45A
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=48V ,VGS=0V
IGSS Gate-Source Leakage
VGS=+20V, VDS=0V
Qg Total Gate Charge2
ID=45A
Qgs Gate-Source Charge
VDS=48V
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
td(on)
Turn-on Delay Time2
VDS=30V
tr Rise Time
ID=45A
td(off)
Turn-off Delay Time
RG=3.3Ω
tf Fall Time
VGS=10V
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
Rg Gate Resistance
Source-Drain Diode
f=1.0MHz
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt=100A/µs
60 - - V
- 0.05 - V/
- - 8.5 mΩ
- - 12 mΩ
1 - 3V
- 72 -
S
- - 10 uA
- - 100 uA
- - +100 nA
- 72 115 nC
- 16 - nC
- 53 - nC
- 20 - ns
- 76 - ns
- 67 - ns
- 109 - ns
- 5700 9200 pF
- 900 - pF
- 560 - pF
- 1.1 1.7 Ω
Min. Typ. Max. Units
- - 1.3 V
- 40 - ns
- 60 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A .
4.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
5.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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250
T C = 25 o C
200
150
100
10V
7.0 V
5.0V
4.5V
50
V G =3.0V
0
0369
V DS , Drain-to-Source Voltage (V)
12
Fig 1. Typical Output Characteristics
11
I D =20A
T C =25 o C
10
9
8
7
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
50
40
30
T j =150 o C
20
T j =25 o C
10
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP95T06GS/P-HF
120
T C = 150 o C
80
10V
7.0 V
5.0V
4.5V
40
V G =3.0V
0
0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D =45A
V G =10V
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
150
1.5
1.0
0.5
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP95T06GS/P-HF
10
I D = 45 A
8
V DS = 30 V
V DS = 38 V
6 V DS = 48 V
4
2
0
0 20 40 60 80 100 120
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
100us
1ms
10
10ms
T c =25 o C
Single Pulse
100ms
DC
1
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
1000
Fig 9. Maximum Safe Operating Area
130
V DS =5V
104
T j =25 o C
T j =150 o C
78
52
26
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4



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