AP9468GM Datasheet PDF - Advanced Power Electronics

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AP9468GM
Advanced Power Electronics

Part Number AP9468GM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP9468GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
Description
D
D
D
D
SO-8
G
SS
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widly preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
BVDSS
RDS(ON)
ID
40V
7mΩ
14.6A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
40
± 20
14.6
11.7
60
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
201015071-1/4



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AP9468GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=14A
VGS=4.5V, ID=7A
VDS=VGS, ID=250uA
VDS=10V, ID=14A
VDS=40V, VGS=0V
VDS=32V, VGS=0V
VGS=±20V
ID=14A
VDS=32V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3Ω,VGS=10V
RD=20Ω
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
40 - - V
- - 7 mΩ
- - 9 mΩ
0.5 - 2 V
- 14 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 32 51 nC
- 4 - nC
- 16 - nC
- 10 - ns
- 7 - ns
- 56 - ns
- 26 - ns
- 2235 3580 pF
- 365 - pF
- 325 - pF
- 1.8 2.7
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V
IS=14A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 33 - ns
- 33 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4



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40
T A = 25 o C
10V
7.0V
5.0V
30 4.5V
V G =3.0V
20
10
0
001122
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
ID=7A
T A =25
7
6
5
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
T j =150 o C
T j =25 o C
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP9468GM
40
T A = 150 o C
10V
7.0V
5.0V
30 4.5V
V G =3.0V
20
10
0
001122
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I D = 14 A
V G =10V
1.4
0.9
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3/4



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AP9468GM
16
I D = 14 A
12
V DS = 20 V
V DS = 24 V
V DS = 32 V
8
4
0
0 20 40 60 80
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
f=1.0MHz
10000
C iss
1000
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4



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