AP9467AGMT-HF-3 Datasheet PDF - Advanced Power Electronics

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AP9467AGMT-HF-3
Advanced Power Electronics

Part Number AP9467AGMT-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP9467AGMT-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
SO-8 Compatible with Heatsink
Low On-resistance
RoHS-compliant, halogen-free
G
D
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The PMPAK®5x6 package is specially designed for DC-DC converter
applications, with a foot print that is compatible with the popular SO-8
and offers a backside heat sink and lower package profile.
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TA=25°C
ID at TA=70°C
IDM
PD at TC=25°C
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
BV DSS
R DS(ON)
ID
40V
11.5m
38A
D
D
D
D
S
S
S
G
PMPAK®5x6
Rating
40
±20
38
15.8
12.6
150
29.7
5
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Value
4.2
25
Units
°C/W
°C/W
Ordering Information
AP9467AGMT-HF-3TR
RoHS-compliant halogen-free PMPAK®5x6, shipped on tape
and reel (3000pcs/reel)
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
PMPAK® is a registered trademark of Advanced Power Electronics Corp.
200907241-3 1/5



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Advanced Power
Electronics Corp.
AP9467AGMT-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=10A
VGS=4.5V, ID=6A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=40V, VGS=0V
VGS=±20V
ID=10A
VDS=20V
VGS=4.5V
VDS=20V
ID=1A
RG=3.3, VGS=10V
RD=20
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
40 - - V
- - 11.5 m
- - 20 m
1 - 3V
- 26 -
S
- - 10 uA
- - ±100 nA
- 9 14.5 nC
- 2 - nC
-5
- nC
- 7 - ns
- 6.5 - ns
- 20 - ns
- 8.5 - ns
- 665 1060 pF
- 140 - pF
- 80 - pF
- 2.2 -
Min. Typ. Max. Units
- - 1.2 V
- 21 - ns
- 14 - nC
Notes:
1.Pulse width limited by maximum junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60°C/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Typical Electrical Characteristics
120
T C =25 o C
100
80
10V
7.0V
6.0V
5.0V
60 V G = 4.0 V
40
20
0
0.0 1.0 2.0 3.0 4.0 5.0
V DS , Drain-to-Source Voltage (V)
6.0
Fig 1. Typical Output Characteristics
16
I D =6A
T C =25 o C
14
12
10
8
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
T j =150 o C
T j =25 o C
20
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP9467AGMT-HF-3
80
T C =150 o C
10V
7.0V
6.0V
60 5.0V
V G =4.0V
40
20
0
0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =10A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.6
1.2
0.8
0.4
0.0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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Advanced Power
Electronics Corp.
Typical Electrical Characteristics (cont.)
AP9467AGMT-HF-3
f=1.0MHz
10 1200
I D =10A
8
V DS =20V
6
4
1000
800
600
400
C iss
2
0
0 4 8 12
Q G , Total Gate Charge (nC)
16
C200
oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
Operation in this area
limited by RDS(ON)
10
100us
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0
0.01 0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
4/5



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AP9467AGMT-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9467AGMT-HF-3
Advanced Power Electronics
AP9467AGMT-HF-3 pdf

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