AP9465BGJ Datasheet PDF - Advanced Power Electronics

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AP9465BGJ
Advanced Power Electronics

Part Number AP9465BGJ
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP9465BGH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
D BVDSS
40V
RDS(ON)
32mΩ
G ID 20A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications.
The through-hole version (AP9465BGJ) are available for low-profile
applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
G
D
S
Rating
40
+20
20
12
60
20.8
0.17
-55 to 150
-55 to 150
TO-252(H)
TO-251(J)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
6.0
62.5
110
Units
/W
/W
/W
1
200903092



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AP9465BGH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Static Drain-Source On-Resistance2 VGS=10V, ID=12A
VGS=4.5V, ID=8A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=12A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=32V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=12A
Gate-Source Charge
VDS=32V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=20V
Rise Time
ID=12A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=1.67Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
40 - - V
- - 32 m
- - 45 m
1 - 3V
- 15 -
S
- - 10 uA
- - 250 uA
- - +100 nA
- 6.6 11 nC
- 1.5 - nC
- 4 - nC
- 4.7 - ns
- 23 - ns
- 16 - ns
- 3 - ns
- 450 720 pF
- 70 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=12A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 19 - ns
- 11 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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40
T C =25 o C
10V
7.0 V
5.0V
30 4.5 V
20
V G = 3.0 V
10
0
0.0 1.0 2.0 3.0 4.0
V DS , Drain-to-Source Voltage (V)
5.0
Fig 1. Typical Output Characteristics
40
I D =8A
T C =25 o C
36
32
28
24
20
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0 0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
AP9465BGH/J
40
T C =150 o C
10V
7 .0V
5.0V
30 4.5 V
20
V G =3.0V
10
0
0.0 1.0 2.0 3.0 4.0 5.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =12A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
150
1.1
1.0
0.9
0.8
0.7
0.6
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP9465BGH/J
16
I D =12A
12
V DS =20V
V DS =24V
V DS =32V
8
4
0
0 4 8 12
Q G , Total Gate Charge (nC)
16
Fig 7. Gate Charge Characteristics
100
10
100us
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0
0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
40
V DS =5V
30
20
T j =25 o C
T j =150 o C
10
0
012345
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4



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