AP9420GM-HF Datasheet PDF - Advanced Power Electronics

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AP9420GM-HF
Advanced Power Electronics

Part Number AP9420GM-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP9420GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Ultra_Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
Description
D
D
D
D
SO-8
G
SS
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
3m
25A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
25
20.8
100
3.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
40
Unit
/W
1
200911091



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AP9420GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=10V, ID=18A
VGS=4.5V, ID=12A
VDS=VGS, ID=250uA
VDS=10V, ID=12A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=12A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3,VGS=10V
RD=15
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
30 - - V
- - 3 m
- - 5.5 m
1 - 3V
- 45 -
S
- - 10 uA
- - +100 nA
- 33 53 nC
- 6.5 - nC
- 19 - nC
- 14 - ns
- 10.5 -
ns
- 45 - ns
- 37 - ns
- 2620 4200 pF
- 720 - pF
- 375 - pF
- 0.9 -
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=2.1A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 44 - ns
- 48 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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80
T A = 25 o C
10 V
7.0 V
6.0 V
60 5.0 V
V G =4.0V
40
20
0
001122
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
I D = 12 A
T A =25
3.6
3.2
2.8
2.4
2
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
T j =150 o C
T j =25 o C
16
12
8
4
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP9420GM-HF
60
T A = 150 o C
10 V
7.0 V
50
6.0 V
5.0 V
40 V G =4.0V
30
20
10
0
001122
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I D = 18 A
V G =10V
1.4
0.9
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP9420GM-HF
10
I D = 12 A
V DS = 15 V
8
6
4
2
0
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
1000
100
Operation in this
area limited by
RDS(ON)
10
100us
1ms
10ms
1
100ms
0.1
T A =25 o C
Single Pulse
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
1s
DC
100
Fig 9. Maximum Safe Operating Area
f=1.0MHz
4000
3000
C iss
2000
C1000
oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.0001
0.001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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AP9420GM-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9420GM-HF
Advanced Power Electronics
AP9420GM-HF pdf

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