AP4416GJ Datasheet PDF - Advanced Power Electronics

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AP4416GJ
Advanced Power Electronics

Part Number AP4416GJ
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP4416GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4416GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
35V
45mΩ
20A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
35
±20
20
12
50
26
0.21
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4.8
110
Units
/W
/W
Data & specifications subject to change without notice
200418051-1/4

AP4416GJ datasheet pdf
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AP4416GJ pdf
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