AP4416GH Datasheet PDF - Advanced Power Electronics

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AP4416GH
Advanced Power Electronics

Part Number AP4416GH
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP4416GH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant
Description
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4416GJ) is available for low-profile applications.
BVDSS
RDS(ON)
ID
35V
45mΩ
20A
G D S TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
G
D
S
TO-251(J)
Rating
35
±20
20
12
50
26
0.21
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4.8
110
Units
/W
/W
Data & specifications subject to change without notice
200418051-1/4



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AP4416GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=12A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=8A
VDS=VGS, ID=250uA
VDS=10V, ID=11A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=12A
VDS=30V
VGS=4.5V
VDS=15V
ID=12A
RG=3.3Ω,VGS=10V
RD=1.25Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
35 - - V
- 0.03 - V/
- - 45 mΩ
- - 65 mΩ
1 - 3V
- 10 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 6 10 nC
- 2 - nC
- 3.5 - nC
- 6 - ns
- 36 - ns
- 11 - ns
- 2 - ns
- 460 740 pF
- 80 - pF
- 60 - pF
- 1.1 1.6 Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=12A, VGS=0V
IS=12A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 17 - ns
- 10 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4



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45
T C =25 o C
30
15
10V
7.0V
5.0V
4.5V
V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
110
ID=8A
90 T C =25 o C
70
50
30
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
16
12
T j =150 o C
8
T j =25 o C
4
0
0 0.4 0.8 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
AP4416GH/J
45
T C = 150 o C
30
10V
7.0V
5.0V
15
4.5V
V G =3.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D = 12 A
V G =10V
1.4
1.0
0.6
-50 0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
150
1.4
1
0.6
0.2
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4



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AP4416GH/J
16
ID=12A
12
V DS =15V
V DS =2 5 V
V DS = 30 V
8
4
0
0 4 8 12
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100.0
100us
10.0
1.0
T c =25 o C
Single Pulse
1ms
10ms
100ms
DC
0.1
0.1
1
10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
V DS =5V
T j =25 o C
20
T j =150 o C
10
0
02468
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
10
f=1.0MHz
1000
C iss
C100 oss
C rss
10
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4/4



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