AP4407GM-HF-3 Datasheet PDF - Advanced Power Electronics

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AP4407GM-HF-3
Advanced Power Electronics

Part Number AP4407GM-HF-3
Description P-channel Enhancement-mode Power MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP4407GM-HF-3
P-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
Low On-resistance
BV DSS
-30V
Fast Switching Performance
RDS(ON)
14m
RoHS-compliant, halogen-free
G
ID -10.7A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP4407GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8 (M)
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
-30
±25
- 10.7
-8.6
-50
2.5
0.02
-55 to 150
-55 to 150
Value
25
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
°C/W
Ordering Information
AP4407GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
201207252-3 1/5
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AP4407GM-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-4.5V, ID=-5A
VDS=VGS, ID=-250uA
VDS=-10V, ID=-10A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS = ±25V
ID=-10A
VDS=-24V
VGS=-4.5V
VDS=-15V
ID=-1A
RG=6.8Ω, VGS=-10V
RD=15
VGS=0V
VDS=-25V
f=1.0MHz
Min. Typ. Max. Units
-30 - - V
- -0.015 - V/°C
- - 14 m
- - 25 m
-1.0 - -3.0 V
- 13 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 28 45 nC
- 5.2 - nC
- 19.8 - nC
- 12 - ns
- 11 - ns
- 97 - ns
- 72 - ns
- 1960 3200 pF
- 590 - pF
- 465 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-2.0A, VGS=0V
IS=-10A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 36 - ns
- 34 - nC
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300µs , duty cycle < 2%
3.Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Typical Electrical Characteristics
40
-10V
30
T A =25 o C
-5.0V
-4.5V
-4.0V
20
V G =-3.0V
10
0
012
-V DS , Drain-to-Source Voltage (V)
3
Fig 1. Typical Output Characteristics
25
I D =-10A
T A =25 o C
20
15
10
35
79
-V GS , Gate-to-Source Voltage (V)
11
Fig 3. On-Resistance vs. Gate Voltage
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1
0.3 0.5 0.7 0.9 1.1 1.3
-V SD , Source-to-Drain Voltage (V)
1.5
Fig 5. Forward Characteristic of
Reverse Diode
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP4407GM-HF-3
40
T A =150 o C
30
20
10
-10V
-5.0V
-4.5V
-4.0V
V G =-3.0V
0
01
122
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.80
I D =-10A
1.60
V GS = -10V
1.40
1.20
1.00
0.80
0.60
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.6
2.2
1.8
1.4
1
0.6
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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Typical Electrical Characteristics (cont.)
AP4407GM-HF-3
14
12 I D = -10A
V DS = -24V
10
8
6
4
f=1.0MH
10000
Ciss
1000
Coss
Crss
2
0
0 2 4 6 8 10 12 14 16 18
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
100us
10
1ms
1 10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
10s
DC
0.01
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125°C/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveforms
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
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Advanced Power Electronics
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