AP3402GEJ Datasheet PDF - Advanced Power Electronics

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AP3402GEJ
Advanced Power Electronics

Part Number AP3402GEJ
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP3402GEH/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP3402GEJ) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
BVDSS
RDS(ON)
ID
35V
18mΩ
38A
GD
S
TO-252(H)
G
DS
TO-251(J)
Rating
35
±20
38
24
110
34.7
0.27
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.6
110
Units
/W
/W
Data and specifications subject to change without notice
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AP3402GEH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=25A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=20A
VDS=VGS, ID=250uA
VDS=10V, ID=25A
VDS=30V, VGS=0V
VDS=24V ,VGS=0V
VGS=±20V
ID=25A
VDS=25V
VGS=4.5V
VDS=15V
ID=25A
RG=3.3Ω,VGS=10V
RD=0.6Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
35 -
-V
- 0.03 - V/
- - 18 mΩ
- - 32 mΩ
1 - 3V
- 22 -
S
- - 1 uA
- - 25 uA
- - ±30 uA
- 10.5 17 nC
- 4 - nC
- 6 - nC
- 9 - ns
- 78 - ns
- 19 - ns
- 4 - ns
- 950 1520 pF
- 160 - pF
- 110 - pF
- 2.5 3.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
IS=25A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 22 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
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100
T C =25 o C
80
10V
7.0V
60
5.0V
40
4.5V
20
V G =3.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D =20A
50 T C =25 o C
40
30
20
10
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
15
T j =150 o C
10
T j =25 o C
5
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
Downloaded from Elcodis.com electronic components distributor
AP3402GEH/J
80
T C =150 o C
60
10V
7.0V
40 5.0V
4.5V
20
V G =3.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.5
I D =25A
V G =10V
1.2
0.9
0.6
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
1.5
1.2
0.9
0.6
0.3
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4



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AP3402GEH/J
14
12 I D =25A
10 V DS =15V
V DS =20V
8 V DS =25V
6
4
2
0
0 5 10 15
Q G , Total Gate Charge (nC)
20
Fig 7. Gate Charge Characteristics
1000
100
10
1
T C =25 o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
50
V DS =5V
40
30 T j =25 o C
T j =150 o C
20
10
0
0246
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
Downloaded from Elcodis.com electronic components distributor
f=1.0MHz
10000
C1000 iss
C oss
C rss
100
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4/4



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