AP2612GY-HF Datasheet PDF - Advanced Power Electronics

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AP2612GY-HF
Advanced Power Electronics

Part Number AP2612GY-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP2612GY-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 1.8V Gate Drive
Simple Drive Requirement
Surface Mount Device
RoHS Compliant
S
D
D
SOT-26
G
D
D
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
G
30V
35mΩ
6A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+8
6
4.7
20
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201103241



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AP2612GY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, ID=250uA
VGS=4.5V, ID=5A
VGS=2.5V, ID=2.5A
VGS=1.8V, ID=1A
VDS=VGS, ID=250uA
VDS=5V, ID=5A
VDS=24V, VGS=0V
VGS=+8V, VDS=0V
ID=5A
VDS=15V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3
VGS=5V
VGS=0V
VDS=15V
f=1.0MHz
f=1.0MHz
30 - - V
- - 35 mΩ
- - 45 mΩ
- - 75 mΩ
0.3 - 1.2 V
- 17 -
S
- - 10 uA
- - +100 nA
- 8.5 14 nC
- 1 - nC
- 3.5 - nC
- 8 - ns
- 9 - ns
- 17 - ns
- 6 - ns
- 460 740 pF
- 80 - pF
- 70 - pF
- 2 4Ω
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
IS=1.3A, VGS=0V
IS=5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 18 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board t 10S ; 156/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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30
T A =25 o C
20
5.0V
4.5V
3.5V
2.5V
10
V G =1.5V
0
01234
V DS , Drain-to-Source Voltage (V)
5
Fig 1. Typical Output Characteristics
100
I D = 1A
T A =25 o C
80
60
40
20
012345
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
8
6
T j =150 o C
T j =25 o C
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP2612GY-HF
30
T A =150 o C
20
5.0V
4.5V
3.5V
2.5V
10
V G =1.5V
0
0246
V DS , Drain-to-Source Voltage (V)
8
Fig 2. Typical Output Characteristics
1.8
I D =5A
1.6 V G =4.5V
1.4
1.2
1.0
0.8
0.6
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D =1mA
1.6
150
1.2
0.8
0.4
0
-50 0 50 100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP2612GY-HF
8
I D =5A
V DS =15V
6
4
f=1.0MHz
800
600
C iss
400
2
0
0 4 8 12
Q G , Total Gate Charge (nC)
16
Fig 7. Gate Charge Characteristics
200
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
Operation in this area
limited by RDS(ON)
1
100us
1ms
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
30
V DS =5V
20
10
T j =150 o C
T j =25 o C
0 T j = -40 o C
0123
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
5
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 12. Gate Charge Waveform
4



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AP2612GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP2612GY-HF
Advanced Power Electronics
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