AP2306AGEN Datasheet PDF - Advanced Power Electronics

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AP2306AGEN
Advanced Power Electronics

Part Number AP2306AGEN
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP2306AGEN
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 2.5V Gate Drive
Small Outline Package
Surface Mount Device
D
S
Description
SOT-23 G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
BVDSS
RDS(ON)
ID
G
30V
50mΩ
4.1A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TA=25
ID@TA=70
IDM
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
PD@TA=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
30
+6
4.1
3.3
16
1.38
-55 to 150
-55 to 150
Value
90
Units
V
V
A
A
A
W
Unit
/W
Data and specifications subject to change without notice
1
200812031

AP2306AGEN datasheet pdf
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AP2306AGEN pdf
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