AP22T03GH-HF Datasheet PDF - Advanced Power Electronics

www.Datasheet-PDF.com

AP22T03GH-HF
Advanced Power Electronics

Part Number AP22T03GH-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


AP22T03GH-HF datasheet pdf
Download PDF
AP22T03GH-HF pdf
View PDF for Mobile


No Preview Available !

Advanced Power
Electronics Corp.
AP22T03GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
30V
33mΩ
15.6A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=70
IDM
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
PD@TC=25
PD@TA=25
TSTG
TJ
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
15.6
9.8
50
12.5
2
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
10
62.5
Units
V
V
A
A
A
W
W
Units
/W
/W
Data & specifications subject to change without notice
1
200912221



No Preview Available !

AP22T03GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=12A
VGS=4.5V, ID=8A
VDS=VGS, ID=250uA
VDS=10V, ID=12A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=8A
VDS=24V
VGS=4.5V
VDS=15V
ID=8A
RG=3.3,VGS=10V
RD=1.88Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- - 33 mΩ
- - 60 mΩ
1 - 3V
- 8.5 -
S
- - 25 uA
- - +100 nA
- 4 6.4 nC
- 1.3 - nC
- 2.3 - nC
- 6 - ns
- 23 - ns
- 13 - ns
- 3 - ns
- 280 448 pF
- 75 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=12A, VGS=0V
IS=8A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 16 - ns
- 8 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



No Preview Available !

50
T C =25 o C
40
30
20
10
10V
7.0V
6.0V
5.0V
V G = 4.0 V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D =8A
T C =25 o C
50
40
30
20
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
10
8
T j =150 o C
T j =25 o C
6
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
40
T C =150 o C
30
20
10
AP22T03GH-HF
10V
7.0V
6.0V
5.0V
V G =4.0V
0
02468
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =12A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



No Preview Available !

AP22T03GH-HF
10
I D =8A
V DS =24V
8
6
4
2
0
0246
Q G , Total Gate Charge (nC)
8
Fig 7. Gate Charge Characteristics
100
Operation in this area
limited by RDS(ON)
10
100us
1
T C =25 o C
Single Pulse
1ms
10ms
100ms
DC
0
0.1 1 10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
500
400
300
C iss
200
C100
oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



AP22T03GH-HF datasheet pdf
Download PDF
AP22T03GH-HF pdf
View PDF for Mobile


Related : Start with AP22T03GH-H Part Numbers by
AP22T03GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP22T03GH-HF
Advanced Power Electronics
AP22T03GH-HF pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact