AP15N03GH-HF Datasheet PDF - Advanced Power Electronics

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AP15N03GH-HF
Advanced Power Electronics

Part Number AP15N03GH-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 6 Pages


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Advanced Power
Electronics Corp.
AP15N03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching
RoHS Compliant
Description
D
G
S
TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP15N03GJ) is
available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
80mΩ
15A
G
DS
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
30
+20
15
9
50
26
0.21
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
W/
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.8
62.5
110
Unit
/W
/W
/W
Data & specifications subject to change without notice
1
200811193



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AP15N03GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=8A
VGS=4.5V, ID=6A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=8A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V
ID=8A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=5V
VDS=15V
Rise Time
ID=8A
Turn-off Delay Time
RG=3.4Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=1.9Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.037 - V/
- - 80 m
- - 100 m
1 - 3V
-7-S
` - 1 uA
- - 25 uA
- - +100 nA
- 4.6
nC
- 1.1
nC
-3
nC
- 4.9 -
ns
- 22.5 -
ns
- 12.2 -
ns
- 3.3 -
ns
- 160 - pF
- 107 - pF
- 32 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
IS=15A, VGS=0V
Min. Typ. Max. Units
- - 15 A
- - 50 A
- - 1.3 V
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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40
T C = 25 o C
30
20
10
10V
8.0V
6.0V
V G =4.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
90
I D =8A
T C =25 o C
80
70
60
50
40
2 4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
10
T j =150 o C
8
T j =25 o C
6
4
2
0
0 0.4 0.8 1.2 1.6
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP15N03GH/J-HF
30
T C = 1 50 o C
20
10V
8.0V
6.0V
10
V G =4.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =8A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
150
1.8
1.6
1.4
1.2
1
-50
-25
0 25 50 75 100 125
T j , Junction Temperature( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP15N03GH/J-HF
16
I D =8A
12 V DS =16V
V DS =20V
V DS =24V
8
4
0
0 2 4 6 8 10
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
500
400
300
200
C iss
C100 oss
C rss
0
1 5 9 13 17 21 25 29
V DS (V)
Fig 8. Typical Capacitance Characteristics
100
100us
10 1ms
10ms
1 100ms
DC
T C =25 o C
Single Pulse
0.1
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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Advanced Power Electronics
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