AP0504GH-HF Datasheet PDF - Advanced Power Electronics

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AP0504GH-HF
Advanced Power Electronics

Part Number AP0504GH-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 4 Pages


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Advanced Power
Electronics Corp.
AP0504GH-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
D
Simple Drive Requirement
Fast Switching Characteristic
G
RoHS Compliant & Halogen-Free
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
BVDSS
RDS(ON)
ID
40V
6.3mΩ
66A
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25
ID@TC=70
IDM
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
PD@TC=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
40
+20
66
41
200
44.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Value
2.8
62.5
Units
/W
/W
Data & specifications subject to change without notice
1
200912141



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AP0504GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=40A
VGS=4.5V, ID=30A
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=32V, VGS=0V
VGS=+20V
ID=30A
VDS=32V
VGS=4.5V
VDS=20V
ID=30A
RG=3.3,VGS=10V
RD=0.67Ω
VGS=0V
VDS=25V
f=1.0MHz
40 - - V
- - 6.3 m
- - 8.5 m
1 - 3V
- 75 -
S
- - 25 uA
- - +100 nA
- 14.5 23 nC
- 4 - nC
- 8 - nC
- 9 - ns
- 64 - ns
- 23 - ns
- 6.5 - ns
- 1640 2620 pF
- 340 - pF
- 180 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=40A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 29 - ns
- 24 - nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2



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200
T C =25 o C
160
120
10V
7.0V
6.0V
5.0V
V G = 4.0 V
80
40
0
0.0 2.0 4.0 6.0 8.0
V DS , Drain-to-Source Voltage (V)
10.0
Fig 1. Typical Output Characteristics
7.4
I D =30A
7 T C =25 o C
6.6
6.2
5.8
5.4
5
2 4 6 8 10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
30
20
T j =150 o C
T j =25 o C
10
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP0504GH-HF
120
T C =150 o C
100
80
10V
7.0V
6.0V
5.0V
V G =4.0V
60
40
20
0
0.0 1.0 2.0 3.0 4.0
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =30A
V G =10V
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3



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AP0504GH-HF
10
I D =30A
V DS =32V
8
6
4
2
0
0 10 20
Q G , Total Gate Charge (nC)
30
Fig 7. Gate Charge Characteristics
1000
100 Operation in this area
limited by RDS(ON)
100us
10
1ms
T C =25 o C
Single Pulse
1
0.01
0.1
1
10ms
100ms
DC10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
2400
2000
C1600 iss
1200
800
C400 oss
C rss
0
1 5 9 13 17 21 25 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4



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AP0504GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP0504GH-HF
Advanced Power Electronics
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