AOP806 Datasheet PDF - Alpha & Omega Semiconductors


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AOP806
Alpha & Omega Semiconductors

Part Number AOP806
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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AOP806
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP806 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or
in PWM applications.
Standard Product AOP806 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
VDS (V) = 75V
ID = 3.4A (VGS = 10V)
RDS(ON) < 132m(VGS = 10V)
RDS(ON) < 168m(VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Maximum
Parameter
Symbol 10 Sec Steady State
Drain-Source Voltage
VDS 75
Gate-Source Voltage
VGS ±25
Continuous Drain
TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
3.4 2.7
ID 2.7 2.1
IDM 15
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
2.5 1.6
1.6 1
10
15
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
40
67
33
Max
50
80
40
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=75V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±25V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=3.4A
VGS=4.5V, ID=2A
Forward Transconductance
VDS=5V, ID=3.4A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
75
1
15
1
5
100
2.3 3
108 132
162 198
128 168
10
0.77 1
3
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
290 380
54
24
2.4 3.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=3.4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=8.8,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3.4A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs
5.1 7
2.3
1.0
1.2
4
3.4
14.4
2.4
30.2 45
21.5
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
Rev1: May. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
6V
12 10V
4.5V
15
12
VDS=5V
9 4V 9
125°C
66
25°C
3
3.5V
3
0
012345
VDS (Volts)
Figure 1: On-Region Characteristics
200
170 VGS=4.5V
140
110
VGS=10V
80
50
0 2 4 6 8 10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
12345
VGS(Volts)
Figure 2: Transfer Characteristics
1.8
VGS=10V
1.6 ID=3.4A
1.4
VGS=4.5V
1.2 ID=2A
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
210
ID=3.4A
180
150
125°C
120
90
25°C
60
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
125°C
25°C
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=30V
ID=3.4A
8
500
400
6 300
Ciss
4
2
0
0123456
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
100
Coss
Crss
0
0 10 20 30 40 50 60
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150°C TA=25°C
10.0
RDS(ON)
limited
1.0
DC
10µs
100µs
1ms
10ms
0.1s
10s 1s
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
50
TJ(Max)=150°C
40 TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=80°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com




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