AOP804 Datasheet PDF - Alpha & Omega Semiconductors


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AOP804
Alpha & Omega Semiconductors

Part Number AOP804
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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AOP804
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP804 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOP804 is Pb-free
(meets ROHS & Sony 259 specifications). AOP804L
is a Green Product ordering option. AOP804 and
AOP804L are electrically identical.
Features
VDS (V) = 60V
ID = 4.7A (VGS = 10V)
RDS(ON) < 55m(VGS = 10V)
RDS(ON) < 75m(VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
4.7
3.8
20
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
37
74
28
Max
50
90
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



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N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.7A
VGS=4.5V, ID=4A
Forward Transconductance
VDS=5V, ID=4.7A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
60
1
20
1
5
100
2.3 3
42 56
75
54 77
11
0.78 1
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=4.7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4.7A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4.7A, dI/dt=100A/µs
450 540
60
25
1.65 2
pF
pF
pF
8.5 10.5
4.3 5.5
1.6
2.2
5.1
2.6
15.9
2
25.1 35
28.7
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10.0V
5.0V
15
10
5
4.5V
4.0V
15
10
5
VGS=3.5V
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
0
2
100
90
80
70 VGS=4.5V
60
50
40 VGS=10V
30
20
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
2
1.8
1.6
1.4
1.2
1
0.8
0
VDS=5V
125°C
25°C
2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
5
VGS=10V
ID=4.7A
VGS=4.5V
ID=3.0A
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
160
ID=4.7A
140
120
125°C
100
80
25°C
60
40
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=30V
8 ID= 4.7A
6
4
2
800
600
400
200
Coss
Crss
Ciss
0
0 2 4 6 8 10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0 10 20 30 40 50 60
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
10.0
1.0
TJ(Max)=150°C
TA=25°C
10ms
100µs
1ms
10µs
0.1s
10s 1s
DC
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.




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