AOP800 Datasheet PDF - Alpha & Omega Semiconductors


www.Datasheet-PDF.com

AOP800
Alpha & Omega Semiconductors

Part Number AOP800
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

AOP800 datasheet pdf
View PDF for PC
AOP800 pdf
View PDF for Mobile


No Preview Available !

www.DataSheet4U.com
AOP800
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOP800 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AOP800 is Pb-free
(meets ROHS & Sony 259 specifications). AOP800L
is a Green Product ordering option. AOP800 and
AOP800L are electrically identical.
Features
VDS (V) = 30V
ID = 9.3A (VGS = 10V)
RDS(ON) < 18m(VGS = 10V)
RDS(ON) < 28m(VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
9.3
7.5
40
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
40
67
33
Max
50
80
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



No Preview Available !

AOP800
www.DataSheet4U.com
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=9.3A
VGS=4.5V, ID=7.4A
Forward Transconductance
VDS=5V, ID=9.3A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=9.3A
VGS=10V, VDS=15V, RL=1.6,
RGEN=3
IF=9.3A, dI/dt=100A/µs
IF=9.3A, dI/dt=100A/µs
Min
30
1
40
Typ Max Units
V
1
5
µA
100 nA
1.8 3
V
A
15.5
22.3
18
27
m
23 28 m
23 S
0.75 1
V
3A
1040
180
110
0.7
1250
0.85
pF
pF
pF
19.2 24
9.36
2.6
4.2
5.2
4.4
17.3
3.3
16.7 22
6.7
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



No Preview Available !

AOP800
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4V
25 10V
4.5V
20 3.5V
15
10
VGS=3V
5
20
16 VDS=5V
12
125°C
8
25°C
4
00
012345
1.5 2 2.5 3 3.5 4
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
28
26
VGS=4.5V
24
22
20
18 VGS=10V
16
14
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.6
VGS=10V
ID=9.3A
1.4
VGS=4.5V
1.2
1
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
40
ID=9.3A
30
125°C
20
25°C
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
125°C
25°C
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.



No Preview Available !

AOP800
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
2
0
0
VDS=15V
ID=9.3A
4 8 12 16
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
1500
1250
1000
Ciss
750
500
Coss
250
0 Crss
05
10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
RDS(ON)
limited
10.0
1.0
TJ(Max)=150°C
TA=25°C
0.1s
1s
10s
DC
100µs
1ms
10ms
10µs
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
50
TJ(Max)=150°C
40 TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.




AOP800 datasheet pdf
Download PDF
AOP800 pdf
View PDF for Mobile


Similiar Datasheets : AOP800 AOP802 AOP804 AOP806

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact