AOP609 Datasheet PDF - Alpha & Omega Semiconductors


www.Datasheet-PDF.com

AOP609
Alpha & Omega Semiconductors

Part Number AOP609
Description Complementary Enhancement Mode Field Effect Transistor
Page 7 Pages

AOP609 datasheet pdf
View PDF for PC
AOP609 pdf
View PDF for Mobile


No Preview Available !

www.DataSheet4U.com
AOP609
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP609 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs
may be used in H-bridge, Inverters and other
applications. Standard Product AOP609 is Pb-
free (meets ROHS & Sony 259 specifications).
AOP609L is a Green Product ordering option.
AOP609 and AOP609L are electrically identical.
Features
n-channel
p-channel
VDS (V) = 60V
-60V
ID = 4.7A (VGS=10V) -3.5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 60m(VGS=10V)
< 115m(VGS =-10V)
< 75m(VGS=4.5V)
< 140m(VGS =-4.5V)
ESD Rating: 1500V HBM 3000V HMB
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
4.7
3.8
20
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t 10s
Steady-State
Symbol
RθJA
Device
n-ch
n-ch
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t 10s
Steady-State
RθJL
RθJA
n-ch
p-ch
p-ch
Maximum Junction-to-Lead C
Steady-State
RθJL
p-ch
Max p-channel
-60
±20
-3.5
-2.9
-20
2.5
1.6
-55 to 150
Typ Max
37 50
74 90
28 40
35 50
73 90
32 40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



No Preview Available !

AOP609
www.DataSheet4U.com
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
TJ=55°C
1
5
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
250 µA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.5 2.4
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=4.7A
TJ=125°C
49
65
60 m
VGS=4.5V, ID=3.0A
57 75 m
gFS Forward Transconductance
VDS=5V, ID=4.7A
17 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.78 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=4.7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=6,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=4.7A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=4.7A, dI/dt=100A/µs
474 570
157
60
1.65 2
5.1 7
2.5 3
1
1.4
5.4
5.5
17.2
2.9
25.4 35
29.4
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : December 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



No Preview Available !

AOP609
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
25
20
15
10
5
0
0
10.0V
5.0V
4.5V
4.0V
VGS=3.5V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
5
15
VDS=5V
10
125°C
5
25°C
0
1 1.5 2 2.5 3 3.5 4
VGS(Volts)
Figure 2: Transfer Characteristics
80
70 VGS=4.5V
60
50
40
VGS=10V
30
20
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
2.2
2 VGS=10V
1.8 ID=4.7A
1.6
VGS=4.5
1.4 ID=3A
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
160
140 ID=4.7A
120
100 125°
80
25°C
60
40
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.



No Preview Available !

AOP609
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
VDS=30V
ID= 4.7A
8
6
4
2
800
600
400
200
Coss
Crss
Ciss
0
0123456
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0 10 20 30 40 50 60
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
10.0
1.0
TJ(Max)=150°C
TA=25°C
10ms
100µs 10µs
1ms
0.1s
10s 1s
DC
0.1
0.1 1
10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.




AOP609 datasheet pdf
Download PDF
AOP609 pdf
View PDF for Mobile


Similiar Datasheets : AOP600 AOP601 AOP604 AOP605 AOP605L AOP606 AOP607 AOP608 AOP609 AOP610 AOP611

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact