AOP608 Datasheet PDF - Alpha & Omega Semiconductors


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AOP608
Alpha & Omega Semiconductors

Part Number AOP608
Description Complementary Enhancement Mode Field Effect Transistor
Page 7 Pages

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AOP608
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP608 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AOP608
is Pb-free (meets ROHS & Sony 259
specifications). AOP608L is a Green
Product ordering option. AOP608 and
AOP608L are electrically identical.
Features
n-channel
VDS (V) = 40V
ID = 6.3A (VGS=10V)
RDS(ON)
< 33m(VGS=10V)
< 46m(VGS=4.5V)
p-channel
-40V
-5.5A (VGS = -10V)
RDS(ON)
< 45m(VGS = -10V)
< 63m(VGS = -4.5V)
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2
S2
G1
S1
PDIP-8
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
6.3
5
20
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-40
±20
-5.5
-4.4
-20
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
37 50 °C/W
74 90 °C/W
28 40 °C/W
35 50 °C/W
73 90 °C/W
32 40 °C/W
Alpha & Omega Semiconductor, Ltd.



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N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=32V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6.3A
VGS=4.5V, ID=5A
Forward Transconductance
VDS=5V, ID=6.3A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
40
1
20
1
5
100
2.3 3
24.1 33
40
33.7 46
22
0.77 1
6.3
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=6.3A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=3,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6.3A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs
404 pF
95 pF
37 pF
2.7
9.2 nC
4.6 nC
1.6 nC
2.5 nC
4.3 ns
3.4 ns
15 ns
2.8 ns
21.2 ns
15.8 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1: Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
10V
25
20
15
10
5
5V
4.5V
4V
VGS=3.5V
20
VDS=5V
15
10 125°C
5 25°C
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
0
2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
50
40
VGS=4.5V
30
VGS=10V
1.8
VGS=10V
1.6 ID=6.3A
1.4 VGS=4.5V
ID=5A
1.2
1
20
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
80
70 ID=6.3A
60
50
125°C
40
30
20 25°C
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
VDS=30V
8 ID= 6.3A
6
4
2
800
600
400
200
Coss
Crss
Ciss
0
0 2 4 6 8 10
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0 10 20 30 40
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
10.0
1.0
TJ(Max)=150°C
TA=25°C
10µs
100µs
10ms 1ms
1s
10s 0.1s
DC
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10 D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.




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