AOP606 Datasheet PDF - Alpha & Omega Semiconductors


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AOP606
Alpha & Omega Semiconductors

Part Number AOP606
Description Complementary Enhancement Mode Field Effect Transistor
Page 7 Pages

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AOP606
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP606 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low
gate charge. The complementary MOSFETs may
be used in inverter and other PWM applications.
Standard Product AOP606 is Pb-free (meets
ROHS & Sony 259 specifications). AOP606L is a
Green Product ordering option. AOP606 and
AOP606L are electrically identical.
Features
n-channel
VDS (V) = 60V
ID = 7.9A (VGS=10V)
RDS(ON)
< 25m(VGS=10V)
< 30m(VGS=4.5V)
p-channel
-60V
-6.1A
RDS(ON)
< 42m(VGS = -10V)
< 52m(VGS = -4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.9
6.3
40
Power Dissipation
TA=25°C
TA=70°C
PD
3.1
2
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-60
±20
-6.1
-4.9
-30
3.1
2
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
30 40 °C/W
66 85 °C/W
25 35 °C/W
30 40 °C/W
66 85 °C/W
25 35 °C/W
Alpha & Omega Semiconductor, Ltd.



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N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=48V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.9A
VGS=4.5V, ID=7.1A
Forward Transconductance
VDS=5V, ID=7.9A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
60
1
40
1
5
100
2.1 3
17.8 25
32.2 42
19.7 30
30
0.74 1
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=7.9A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=3.9,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=7.9A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=7.9A, dI/dt=100A/µs
1920
155
116
0.65
2300
0.8
pF
pF
pF
47.6 68
24.2 30
6
14.4
7.4
5.1
28.2
5.5
34 41
46
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
40
10V
30
4.5V
4V
30
25 VDS=5V
125°C
20
20 15
3.5V
10
10
25°C
VGS=3V
5
0
012345
0
1.5 2 2.5 3 3.5 4
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
24
22
VGS=4.5V
20
18
VGS=10V
16
14
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=10V
ID=7.9A
VGS=4.5V
ID=7.1A
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
50
ID=7.9A
40
125°C
30
20
25°C
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
VDS=15V
8 ID=7.9A
6
4
2
0
0 10 20 30 40 50
Qg (nC)
Figure 7: Gate-Charge Characteristics
3500
3000
2500
Ciss
2000
1500
1000
500
Coss
Crss
0
0 5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
RDS(ON)
limited
10.0
1.0
TJ(Max)=150°C
TA=25°C
0.1s
1s
10s
DC
100µs
1ms
10ms
10µs
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
50
TJ(Max)=150°C
40 TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.




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