AOP601 Datasheet PDF - Alpha & Omega Semiconductors


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AOP601
Alpha & Omega Semiconductors

Part Number AOP601
Description Complementary Enhancement Mode Field Effect Transistor
Page 8 Pages

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AOP601
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP601 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications. A
Schottky diode in parallel with the n-channel FET
reduces body diode related losses. Standard
Product AOP601 is Pb-free (meets ROHS & Sony
259 specifications). AOP601L is a Green Product
ordering option. AOP601 and AOP601L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.5A (VGS = 10V) -6.6A
RDS(ON)
< 28m
< 35m(VGS = -10V)
< 43m
< 58m(VGS = -4.5V)
Schottky
VDS=30V, IF=3A, VF<0.5V@1A
PDIP-8
S2 1
G2 2
8
7
D2
D2
P-ch
S1/A 3
G1 4
6
5
D1/K
D1/K
N-ch
D2 D1
K
G2 G1
A
S2 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.5
6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward Current B
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
4
2.7
20
2.5
1.6
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.



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AOP601
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Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
t 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Thermal Characteristics: Schottky
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Typ
40
67
33
Typ
38
66
30
Typ
42
70
34
Max
50
80
40
Max
50
80
40
Max
50
80
40
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
Rev 3: Sept 2005
Alpha Omega Semiconductor, Ltd.



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AOP601
n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
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Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
gFS Forward Transconductance
ID=250µA, VGS=0V
VDS=24V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.5A
VGS=4.5V, ID=6.0A
VDS=5V, ID=7.5A
TJ=55°C
TJ=125°C
30
1
30
12
VSD Schottky+ Body Diode Forward Voltage IS=1A
IS Maximum Body-Diode+Schottky Continuous Current
1
5
100
1.8 3
22.6 28
33 43
16
0.45 0.5
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
680 pF
Coss Output Capacitance. (Schottky+FET) VGS=0V, VDS=15V, f=1MHz 102 pF
Crss Reverse Transfer Capacitance
77 pF
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery time
Qrr Body Diode Reverse Recovery charge
VGS=4.5V, VDS=15V, ID=7.5A
VGS=10V, VDS=15V, RL=2.0,
RGEN=6
IF=7.5A, dI/dt=100A/µs
IF=7.5A, dI/dt=100A/µs
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
16.5
7.8
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
SCHOTTKY PARAMETERS
VF Forward Voltage Drop
IF=1.0A
0.45 0.5
V
VR=30V
Irm
Maximum reverse leakage current
VR=30V, TJ=125°C
0.007 0.05
3.2 10
mA
VR=30V, TJ=150°C
12 20
CT Junction Capacitance
VR=15V
37 pF
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
Rev 3: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.



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AOP601
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
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30
10V
25
20
15
10
5
0
0
6V
5V
4.5V
4V
3.5V
VGS=3V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
20
16 VDS=5V
12
8
125°C
4
25°C
0
5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS (Volts)
Figure 2: Transfer Characteristics
60
50
40 VGS=4.5V
30
20 VGS=10V
10
0
5 10 15 20
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
60 ID=7.5A
50
125°C
40
30
25°C
20
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.7
1.6
ID=7.5A
VGS=10V
1.5
1.4 VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
0
50 100 150 200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body diode characteristics
MOSFET+Schottky
1.0
Alpha Omega Semiconductor, Ltd.




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