AOP600 Datasheet PDF - Alpha & Omega Semiconductors


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AOP600
Alpha & Omega Semiconductors

Part Number AOP600
Description Complementary Enhancement Mode Field Effect Transistor
Page 7 Pages

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AOP600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP600 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AOP600 is Pb-free (meets ROHS
& Sony 259 specifications). AOP600L is a Green
Product ordering option. AOP600 and AOP600L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.5A (VGS = 10V) -6.6A
RDS(ON)
< 28m
< 35m(VGS = -10V)
< 43m
< 58m(VGS =- 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
PDIP-8
D2 D1
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.5
6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2.5
1.6
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.6
-5.3
-30
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Thermal Characteristics: p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Typ
40
67
33
Typ
38
66
30
Max
50
80
40
Max
50
80
40
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



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n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.5A
VGS=4.5V, ID=6.0A
Forward Transconductance
VDS=5V, ID=7.5A
Body Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-DiodeContinuous Current
TJ=55°C
TJ=125°C
30
1
30
12
1
5
100
1.8 3
22.6 28
33 43
16
0.76 1
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance.
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 820
102
77
3 3.6
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13.84 16.6 nC
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=7.5A
6.74 8.1
1.82
nC
nC
Qgd Gate Drain Charge
3.2 nC
tD(on)
Turn-On DelayTime
4.6 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=2.0, 4.1 ns
tD(off)
Turn-Off DelayTime
RGEN=6
20.6 ns
tf Turn-Off Fall Time
5.2 ns
trr Body Diode Reverse Recovery time IF=7.5A, dI/dt=100A/µs
16.5 20
ns
Qrr Body Diode Reverse Recovery charge IF=7.5A, dI/dt=100A/µs
7.8 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



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AOP600
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
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30
10V
25
20
15
10
5
0
0
6V
5V
4.5V
4V
3.5V
VGS=3V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
20
16 VDS=5V
12
8
125°C
4
25°C
0
5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VGS (Volts)
Figure 2: Transfer Characteristics
60
50
40 VGS=4.5V
30
20
VGS=10V
10
0
5 10 15 20
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
ID=7.5A
VGS=10V
1.5
1.4 VGS=4.5V
1.3
1.2
1.1
1
0.9
0.8
0
50 100 150 200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
70
60 ID=7.5A
50
40 125°C
30
25°C
20
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
1.0E-03
1.0E-04
25°C
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body diode characteristics
1.0
Alpha & Omega Semiconductor, Ltd.



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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
6
4
2
0
0
VDS=15V
ID=7.5A
2 4 6 8 10 12
Qg (nC)
Figure 7: Gate-Charge characteristics
14
1000
900
800
700
600
500
400
300
200
100
0
0
f=1MHz
VGS=0V
Ciss
Coss
Crss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100
RDS(ON)
limited
10
TJ(Max)=150°C
TA=25°C
1ms 100µs
10µs
10ms
0.1s
1 1s
0.1
0.1
10s
DC
1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
1
0.1
0.01
0.00001
0.0001
Single Pulse
PD
Ton T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.




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