AON6554 Datasheet PDF - Alpha & Omega Semiconductors

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AON6554
Alpha & Omega Semiconductors

Part Number AON6554
Description 30V N-Channel AlphaMOS
Page 6 Pages


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AON6554
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
30V
85A
< 2.9m
< 3.7m
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.05mH C
IDSM
IAS
EAS
VDS Spike
100ns
VSPIKE
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
85
66
260
36
28
50
63
36
70
28
5.6
3.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
18
40
1.5
Max
22
55
1.8
Units
V
V
A
A
A
mJ
V
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: March 2013
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AON6554
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V
VDS=VGS, ID=250µA
VGS=10V, ID=20A
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
TJ=125°C
30
1.4
V
1
µA
5
±100 nA
1.8 2.2
V
2.3 2.9
3.2 4.0
m
3 3.7 m
140 S
0.71 1
V
78 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3020
880
140
0.9 1.8
2.7
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
47.3 65 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
21.3
8
30
nC
nC
Qgd Gate Drain Charge
7.2 nC
tD(on)
Turn-On DelayTime
7.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
4.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
41 ns
tf Turn-Off Fall Time
8 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
17.8
ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
33 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2013
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AON6554
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
3.5V
80 4V
4.5V
60 10V
40
3V
100
VDS=5V
80
60
125°C
40
25°C
20
VGS=2.5V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
20
0
012345
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
4
3.5 VGS=4.5V
3
2.5
2
VGS=10V
1.5
1
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
1.6
1.4
VGS=10V
ID=20A
1.2
VGS=4.5V
1 ID=20A
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
6
ID=20A
5
4 125°C
3
2
25°C
1
0
0 2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.1.0: March 2013
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AON6554
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
ID=20A
8
5000
4000
6 3000
Ciss
4
2
0
0 10 20 30 40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
1000.0
100.0
10.0
RDS(ON)
limited
1.0
10µs 10µs
100µs
DC 1ms
10ms
0.1 TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1 1
VDS (Volts)
10
VGS > or equal 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.8°C/W
1
100
2000
1000
Crss
Coss
0
0 5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
500
TJ(Max)=150°C
TC=25°C
400
300
200
100
0
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
1E-05
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
10
100
Rev.1.0: March 2013
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