AON6206 Datasheet PDF - Alpha & Omega Semiconductors

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AON6206
Alpha & Omega Semiconductors

Part Number AON6206
Description 30V N-Channel MOSFET
Page 6 Pages


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AON6206
30V N-Channel MOSFET
General Description
Product Summary
The AON6206 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a "Schottky style" soft recovery body diode.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
24A
< 6.5m
< 9m
Top View
DFN5X6
Bottom View
PIN1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
24
19
150
20
16
30
45
31
12
4.2
2.7
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
25
55
3
Max
30
65
4
Rev 0: Nov. 2009
www.aosmd.com
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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AON6206
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1
5
µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.3 1.8 2.3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
150
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
5.2
7.7
6.5
9.5
m
VGS=4.5V, ID=15A
7 9 m
gFS Forward Transconductance
VDS=5V, ID=20A
70 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1110
350
32
0.4
1390
510
53
0.9
1670
670
90
1.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15.5 19.6 23.5 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=20A
7 8.7 10.5 nC
2.8 3.6 4.5 nC
Qgd Gate Drain Charge
1.8 3 4.2 nC
tD(on)
Turn-On DelayTime
7.5 ns
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.75,
9.7
ns
tD(off)
Turn-Off DelayTime
RGEN=3
20 ns
tf Turn-Off Fall Time
4.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
12 15 18 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
30 37 45 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Nov. 2009
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AON6206
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
10V
140
120
100
80
5V
6V
4V
3.5V
60
40 VGS=3V
20
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
60
50 VDS=5V
40
30
20 125°C
10 25°C
0
1 1.5 2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
10 1.8
8 VGS=4.5V
6
4 VGS=10V
2
0
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
1.6 VGS=10V
ID=20A
1.4
1.2
1
17
5
2
VGS=4.5V10
ID=15A
0.8
0 25 50 75 100 125 150 175 200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Tem18perature
(Note E)
25
ID=20A
20
15
10 125°C
5
25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+4000
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0: Nov. 2009
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AON6206
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 2000
8
VDS=15V
ID=20A
1600
6 1200
Ciss
4
2
0
0 5 10 15 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
800
400
0
0
Crss
Coss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
200
100.0
10.0
1.0
RDS(ON)
limited
10µs 10µs
100µs
DC
1ms
10ms
0.1
TJ(Max)=150°C
TC=25°C
0.0
0.01 0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
160 TJ(Max)=150°C
TC=25°C
120 17
5
80 2
10
40
0
0.0001 0.001 0.01
0.1
1
10
0
Figure
10:
Single
Pulse
Pulse
Width (s)
Power Rating
Ju1nc8tion-to-
Case (Note F)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=4°C/W
1
40
0.1
0.01
0.00001
PD
Single Pulse
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
Rev 0: Nov 2009
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