60V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
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VGS(th) Gate Threshold Voltage
1.5 2 2.5 V
On state drain current
RDS(ON) Static Drain-Source On-Resistance
42 53 mΩ
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous Current
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1 2.3 3.5 Ω
Qg(10V) Total Gate Charge
6.1 12 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=6A
2.6 6 nC
Qgd Gate Drain Charge
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=5Ω,
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
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