AON2240 Datasheet PDF - Freescale

www.Datasheet-PDF.com

AON2240
Freescale

Part Number AON2240
Description 40V N-Channel MOSFET
Page 6 Pages


AON2240 datasheet pdf
Download PDF
AON2240 pdf
View PDF for Mobile

No Preview Available !

AON2240
40V N-Channel MOSFET
General Description
The AON2240 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS =10V)
RDS(ON) (at VGS =4.5V)
40V
8A
< 21m
< 29m
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=100°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
40
±20
8
6
32
2.8
1.8
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
Symbol
RθJA
Typ
37
66
Max
45
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
1/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

AON2240
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
IDSS Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGSID=250µA
1.4 1.9 2.4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
32
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=8A
TJ=125°C
16.8
24.5
21
31
m
VGS=4.5V, ID=4A
22.6 29 m
gFS Forward Transconductance
VDS=5V, ID=8A
33 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.75 1
V
IS Maximum Body-Diode Continuous Current
3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
415 pF
112 pF
11 pF
1 2.2 3.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.5 12 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=20V, ID=8A
3 6 nC
1.2 nC
Qgd Gate Drain Charge
1.1 nC
tD(on)
Turn-On DelayTime
4 ns
tr Turn-On Rise Time
VGS=10V, VDS=20V, RL=2.5, 3 ns
tD(off)
Turn-Off DelayTime
RGEN=3
15 ns
tf Turn-Off Fall Time
2 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs
12.5 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
3.5 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

AON2240
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
4.5V
3.5V
20
VDS=5V
15
15 10
10 3V
5
VGS=2.5V
0
01234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
5 125°C
25°C
0
012345
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
6
50 1.8
40
30 VGS=4.5V
20
10 VGS=10V
0
0 4 8 12
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.6 VGS=10V
ID=8A
1.4
1.2
1
VGS=4.5V
ID=4A
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
ID=8A
50
40
125°C
30
20
10 25°C
0
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

AON2240
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=20V
ID=8A
8
6
4
2
600
500
400
300
200
100
Crss
Ciss
Coss
0
0246
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
0 5 10 15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
100.0
10.0
RDS(ON)
limited
1.0
TJ(Max)=150°C
0.1 TC=25°C
10µs
10µs 100µs
1ms
10ms
DC
10000
1000
100
10
TA=25°C
0.0
0.01
0.1 1
VDS (Volts)
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
1
0.00001
0.001
0.1
10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01 Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
100 1000
4/6
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/



AON2240 datasheet pdf
Download PDF
AON2240 pdf
View PDF for Mobile


Related : Start with AON224 Part Numbers by
AON2240 40V N-Channel MOSFET AON2240
Freescale
AON2240 pdf
AON2240 40V N-Channel MOSFET AON2240
Alpha & Omega Semiconductors
AON2240 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact