AOD468 Datasheet PDF - Alpha & Omega Semiconductors

www.Datasheet-PDF.com

AOD468
Alpha & Omega Semiconductors

Part Number AOD468
Description 11.5A N-Channel MOSFET
Page 6 Pages


AOD468 datasheet pdf
View PDF for PC
AOD468 pdf
View PDF for Mobile


No Preview Available !

AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOD468 & AOI468 have been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
350V@150
11.5A
<0.42
Top View
TO252
DPAK
Bottom View
D
D
Top View
TO251A
IPAK
Bottom View
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
G
D
S
Maximum
300
±30
11.5
8.3
29
3.8
216
430
5
150
1
-50 to 175
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
45
-
0.7
Maximum
55
0.5
1
D
G
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Dec 2010
www.aosmd.com
Page 1 of 6



No Preview Available !

AOD468/AOI468
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=300V, VGS=0V
VDS=240V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=6A
gFS Forward Transconductance
VDS=40V, ID=6A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
300
350
V
0.29
V/ oC
1
10 µA
±100 nΑ
3.4 4 4.5 V
0.31 0.42
11 S
0.74 1
V
12 A
29 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
500 632 790
55 90 125
3 7 11
1.3 2.7 4.1
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=10V, VDS=240V, ID=12A
VGS=10V, VDS=150V, ID=12A,
RG=25
IF=12A,dI/dt=100A/µs,VDS=100V
IF=12A,dI/dt=100A/µs,VDS=100V
10 12.8 16
4.4
4.3
18
31
36
20
130 170 205
1 1.3 1.6
nC
nC
nC
ns
ns
ns
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=3.8A, VDD=150V, RG=10, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2010
www.aosmd.com
Page 2 of 6



No Preview Available !

AOD468/AOI468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
0
0
1.5
10V
6.5V
6V
VGS=5.5V
5 10 15 20 25
VDS (Volts)
Fig 1: On-Region Characteristics
30
100
VDS=40V
-55°C
10
125°C
1
25°C
0.1
2
468
VGS(Volts)
Figure 2: Transfer Characteristics
3
10
1.2
0.9 VGS=10V
0.6
0.3
0.0
0
5 10 15 20 25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
ID=30A
1.1
1 125°C
0.9
25°C
0.8
-100 -50 0 50 100 150 200
TJ (oC)
Figure 5: Break Down vs. Junction Temperature
2.5 VGS=10V
ID=6A
2
1.5
1
0.5
0
-100 -50 0 50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°C
25°C
1.0E-02
1.0E-03
1.0E-04
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Rev0: Dec 2010
www.aosmd.com
Page 3 of 6



No Preview Available !

AOD468/AOI468
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10000
12
VDS=240V
ID=12A
1000
9
100
6
10
3
Ciss
Coss
Crss
0
0 4 8 12 16 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10 RDS(ON)
limited
10µs
100µs
1 1ms
10ms
0.1 DC
0.01
TJ(Max)=175°C
TC=25°C
1
10
100 1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
0.1
1 10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
800
600 TJ(Max)=175°C
TC=25°C
400
200
0
0.0001 0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1 RθJC=1°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.001
0.000001
Single Pulse
PD
Ton
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
10
Rev0: Dec 2010
www.aosmd.com
Page 4 of 6



AOD468 datasheet pdf
Download PDF
AOD468 pdf
View PDF for Mobile


Related : Start with AOD46 Part Numbers by
AOD460 N-Channel Enhancement Mode Field Effect Transistor AOD460
Alpha & Omega Semiconductors
AOD460 pdf
AOD464 N-Channel Enhancement Mode Field Effect Transistor AOD464
Alpha & Omega Semiconductors
AOD464 pdf
AOD466 N-Channel Enhancement Mode Field Effect Transistor AOD466
Alpha & Omega Semiconductors
AOD466 pdf
AOD468 11.5A N-Channel MOSFET AOD468
Alpha & Omega Semiconductors
AOD468 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact