AOD442 Datasheet PDF - Alpha & Omega Semiconductors

www.Datasheet-PDF.com

AOD442
Alpha & Omega Semiconductors

Part Number AOD442
Description 60V N-Channel MOSFET
Page 6 Pages


AOD442 datasheet pdf
Download PDF
AOD442 pdf
View PDF for Mobile

No Preview Available !

AOD442/AOI442
60V N-Channel MOSFET
General Description
Product Summary
The AOD442/AOI442 used advanced trench technology to
provide excellent RDS(ON) and low gate charge. Those
devices are suitable for use as a load switch or in PWM
applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
60V
37A
< 20m
< 25m
Top View
D
TO252
DPAK
Bottom View
D
Top View
TO-251A
IPAK
Bottom View
D
D
S
G
G
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
37
26
60
7
5
30
45
60
30
2.1
1.3
-55 to 175
G
D
S
G
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
17.4
51
1.8
Max
25
60
2.5
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 0 : Aug 2009
www.aosmd.com
Page 1 of 6



No Preview Available !

AOD442/AOI442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS Zero Gate Voltage Drain Current
VDS=48V, VGS=0V
TJ=55°C
1
5 µA
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6 2.1 2.7
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
16
31
20
37
m
VGS=4.5V, ID=20A
20 25 m
gFS Forward Transconductance
VDS=5V, ID=20A
65 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
32 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1535
108
70
0.3
1920
155
116
0.65
2300
200
165
0.8
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
38 47.6 68
nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=30V, ID=20A
20 24.2 30
4.8 6
7
nC
nC
Qgd Gate Drain Charge
8.5 14.4 20
nC
tD(on)
Turn-On DelayTime
7.4 ns
tr Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5, 5.1 ns
tD(off)
Turn-Off DelayTime
RGEN=3
28.2 ns
tf Turn-Off Fall Time
5.5 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs
34 41 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
46 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2009
www.aosmd.com
Page 2 of 6



No Preview Available !

AOD442/AOI442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
4.5V
40
4V
30
20
10
0
0
3.5V
VGS=3V
1234
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
50
VDS=5V
40
125°C
30
20
10
25°C
0
2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
26
VGS=4.5V
22
18
14 VGS=10V
10
0 5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
VGS=10V
ID=20A
17
5
2
VGS=4.5V10
ID=20A
25 50 75 100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junct1io8n
Temperature (Note E)
200
50
ID=20A
40
30 125°C
20
25°C
10
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
1.0E+4000
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 0 : Aug 2009
www.aosmd.com
Page 3 of 6



No Preview Available !

AOD442/AOI442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 3500
VDS=30V
8 ID=20A
6
3000
2500
2000
4 1500
1000
2
500
0
0 10 20 30 40 50
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0
Ciss
Coss
Crss
10 20 30 40 50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
1000.0
200
100.0
10.0
RDS(ON)
limited
1.0
0.1
DC
TJ(Max)=175°C
TC=25°C
10µs
10µs
100µs
1ms
10ms
0.0
0.01
0.1
1 10
VDS (Volts)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
160 TJ(Max)=175°C
TC=25°C
120 17
5
80 2
10
40
0
0.0001 0.001 0.01
0.1
1 0 10
Figure
10:
Single
Pulse
Pulse
Width (s)
Power Rating
Ju1nc8tion-to-
Case (Note F)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
1
40
0.1
0.01
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1
Rev 0 : Aug 2009
www.aosmd.com
Page 4 of 6



AOD442 datasheet pdf
Download PDF
AOD442 pdf
View PDF for Mobile


Related : Start with AOD44 Part Numbers by
AOD442 60V N-Channel MOSFET AOD442
Alpha & Omega Semiconductors
AOD442 pdf
AOD444 N-Channel Enhancement Mode Field Effect Transistor AOD444
Alpha & Omega Semiconductors
AOD444 pdf
AOD4454 150V N-Channel MOSFET AOD4454
Alpha & Omega Semiconductors
AOD4454 pdf
AOD446 N-Channel Enhancement Mode Field Effect Transistor AOD446
Alpha & Omega Semiconductors
AOD446 pdf
AOD448 N-Channel Enhancement Mode Field Effect Transistor AOD448
Alpha & Omega Semiconductors
AOD448 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact