AOD405 Datasheet PDF - Alpha & Omega Semiconductors

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AOD405
Alpha & Omega Semiconductors

Part Number AOD405
Description P-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages


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Rev 3: Sept 2004
AOD405, AOD405L (Green Product)
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD405 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. AOD405L (Green
Product) is offered in a lead-free package.
Features
VDS (V) = -30V
ID = -18A
RDS(ON) < 32m(VGS = -10V)
RDS(ON) < 60m(VGS = -4.5V)
TO-252
D-PAK
D
Top View
Drain Connected to
Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current B,G
TA=25°C G
TA=100°C G
VGS
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-18
-18
-40
-18
40
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
16.7
40
1.9
Max
25
50
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W



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AOD405, AOD405L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-18A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-18A
VGS=-10V, VDS=-15V, RL=0.82,
RGEN=3
IF=-18A, dI/dt=100A/µs
IF=-18A, dI/dt=100A/µs
Min
-30
-1.2
-40
Typ Max
-0.003
-2
-1
-5
±100
-2.4
24.5
36
41
17
-0.76
32
43
60
-1
-18
920 1100
190
122
3.6 4.5
18.7
9.7
2.54
5.4
9
25
20
12
21.4
13
23
11.7
13
35
30
18
26
16
Units
V
µA
nA
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.



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AOD405, AOD405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V -6V
25 -5V
-4.5V
30
25 VDS=-5V
20 -4V 20
15 15
10
-3.5V
10
5
VGS=-3V
0
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
5 125°C
25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VGS(Volts)
Figure 2: Transfer Characteristics
70
65
60
55
50
45
40
35
30
25
20
15
10
0
VGS=-4.5V
VGS=-10V
5 10 15 20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
100
90
80 ID=-18A
70
60
125°C
50
40
30 25°C
20
10
0
3 4 5 6 7 8 9 10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.60
1.40
1.20
1.00
VGS=-4.5V
ID=-10A
VGS=-10V
ID=-18A
0.80
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
1.0E-03
1.0E-04
1.0E-05
25°C
1.0E-06
0.0
0.2 0.4 0.6 0.8
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0
Alpha & Omega Semiconductor, Ltd.



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AOD405, AOD405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.00E+01
8.00E+00
VDS=-15V
ID=-18A
6.00E+00
4.00E+00
2.00E+00
0.00E+00
0
4 8 12 16
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
1500
1250
1000
750
500
250
0
0
Ciss
Coss
Crss
5 10 15 20 25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0 TJ(Max)=150°C, TA=25°C
10.0
RDS(ON)
limited
1.0 1s
10s
1ms
10ms
0.1s
DC
10µs
100µs
0.1
0.1 1 10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
100
1000
Alpha & Omega Semiconductor, Ltd.



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