AOD402 Datasheet PDF - Alpha & Omega Semiconductors

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AOD402
Alpha & Omega Semiconductors

Part Number AOD402
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages


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AOD402
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD402 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, laod
switching and general purpose applications.
Standard Product AOD402 is Pb-free (meets ROHS
& Sony 259 specifications). AOD402L is a Green
Product ordering option. AOD402 and AOD402L are
electrically identical.
TO-252
D-PAK
Top View
Drain Connected to
Tab
GD S
G
VDS (V) = 30V
ID = 18 A (VGS = 20V)
RDS(ON) < 15 m(VGS = 20V)
RDS(ON) < 18 m(VGS = 10V)
RDS(ON) < 44 m(VGS = 4.5V)
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±25
18
12
40
18
40
60
30
2.5
1.6
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16.7
40
1.9
Max
25
50
2.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W



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AOD402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±25V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=20V, ID=18A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=10V, ID=18A
VGS=4.5V, ID=6A
Forward Transconductance
VDS=5V, ID=18A
Diode Forward Voltage
IS=18A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1
40
1
5
100
2.4 3
12 15
17.4 21
15 18
36 44
24
0.8 1
18
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
769 pF
185 pF
131 pF
0.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=10V, ID=18A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=18A,
RL=0.82, RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=18A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
15.9 nC
2.44 nC
4.92 nC
6.2 ns
10.9 ns
16 ns
4.8 ns
18 ns
8.1 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depend
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires. Rev3: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



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AOD402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
35
30
25
20
15
10
5
0
0
6V
7V 5V
4.5V
VGS=4V
3.5V
1234
VDS (Volts)
Fig 1: On-Region Characteristics
5
30
25
20
15
10
5
0
2
VDS=5V
125°C
25°C
2.5 3 3.5 4 4.5 5
VGS(Volts)
Figure 2: Transfer Characteristics
5.5
60
50
40 VGS=4.5V
30
20 VGS=10V
10
0
0
VGS=20V
5 10 15 20 25 30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
VGS=10V, 18A
1.4 VGS=20V,18A
1.2
1
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
60
50
ID=18A
40
30
125°C
20
10 25°C
0
4 8 12 16 20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.



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AOD402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
8 ID=18A
6
4
2
0
0 4 8 12 16 20
Qg (nC)
Figure 7: Gate-Charge Characteristics
1200
1000
800
Ciss
600
Coss
400
200
0
0
Crss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
TJ(Max)=150°C, TA=25°C
10.0
RDS(ON)
limited
1.0
1ms
10ms
0.1s
1s
10s
100µs
DC
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
60
50 TJ(Max)=150°C
40 TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1 RθJA=50°C/W
0.1
0.01
0.001
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
1000
Alpha & Omega Semiconductor, Ltd.



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