AMT8304 Datasheet PDF - ANADIGICS

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AMT8304
ANADIGICS

Part Number AMT8304
Description 2.125 Gb/s Integrated 850nm MSM-TIA
Page 12 Pages


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AMT8304
2.125 Gb/s Integrated 850nm MSM-TIA
DATA SHEET - Rev 2.0
FEATURES
• Differential Output TIA
• 3.3V Operation
• Automatic Gain Control
• Integrated 850nm MSM Detector & TIA
• TO-46 Ultra Flat-Window or Lens Hermetic
Package
• High Reliability
www.DataSAhPeePt4LUIC.cAomTIONS
• 2x Fibre Channel (2.125 Gb/s)
PRODUCT DESCRIPTION
The ANADIGICS AMT8304 is a 3.3V monolithically
integrated Metal-Semiconductor-Metal (MSM)
photodetector and transimpedance amplifier (TIA)
used to convert an 850nm input optical signal into a
differential output voltage, and is manufactured in
ANADIGICS’ 6” GaAs wafer fabrication facility.
The integrated MSM and TIA receiver maximizes
the receiver performance by minimizing the
photodetector input parasitics to the TIA and
VDD 2
T46F
TO-46 Ultra
Flat Window
Package
T46L
T4TL
TO-46
TO-46 Lens
Lens Package with
Package Tabbed Header
internally biasing the photodetector to achieve high
sensitivity, bandwidth and overload performance. As
an integrated product the reliability is inherently
better than a discrete solution, and both the MSM-TIA
integrated circuit and TO-46 flat window and TO-46
lens packaged receiver pass stringent reliability
requirements. These products are readily designed
into receivers and transceivers for 2x Fibre Channel
applications.
OUT
AGC
OUT
US Patents: 5047728, 5646573
PIN
Charge
4.5 GHz
Pump
Osc
4
Figure 1: Equivalent Circuit
12/2003
1
3



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AMT8304
Figure 2: T46F/T46L/T4TL Pin Outline (Bottom View)
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PIN
Table 1: Package PIN Description
DESCRIPTION
COMMENT
1
VOUT - TIA Output Voltage Logical ’1’ with optical
(non-Inverted)
input
2
VDD - Positive Supply
Voltage
+3.3 Volts
3
VOUT - TIA Output Voltage Logical ’0’ with optical
(Inverted)
input
4 Ground
Case is grounded
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
VDD 6.0V
PIN +5dBm
TS Storage Temp. -65 °C to 125 °C
Stresses in excess of the absolute ratings may
cause permanent damage. Functional operation
is not implied under these conditions. Exposure
to absolute ratings for extended periods of time
may adversely affect reliability.
2 DATA SHEET - Rev 2.0
12/2003



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Table 3: Electrical Characteristics
AMT8304
PARAMETER
MIN TYP MAX UNIT
Wavelength (λ)
770 850 860
nm
Detector Diameter
- 100 -
µm
Small Signal Differential
Responsivity (1) (@ 50 MHz)
1000
-
- V/W
Bandwidth (1)
1400 1900
-
MHz
Low Frequency Cutoff
- - 300 KHz
Output Resistance
- 40 -
Optical Overload (2)
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Optical Sensitivity (2)
0-
-19 -
- dBm
- dBm
Differential Output Voltage (3)
- 750 -
mV
TRISE and TFALL (20-80%) (3)
Duty Cycle Distortion (3)
- 140 -
-5-
ps
%
Total Jitter (3),(4)
- 50 -
ps
Supply Current
- 35 55 mA
Operating Voltage Range
+3.0 +3.3 +3.6 Volts
Operating Case Temperature Range
0
- 80
°C
Notes:
(1) Measured at –14 dBm optical input power with output connected into RL = 100(differential)
(2) Measured at 10-10 BER with a 27-1 PRBS at 2.125 Gb/s
(3) Measured with a 27-1 PRBS at 2.125 Gb/s, an input optical power of -3dBm
and RL = 100 (differential)
(4) 6 σ about the center eye crossing
DATA SHEET - Rev 2.0
12/2003
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AMT8304
PERFORMANCE DATA
Figure 3: Eye Diagram with an Optical Input Power of –19dBm (with a 4GHz LPF)
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10mV/Div
100ps/Div
Figure 4: Eye Diagram with an Optical Input Power of –9.0dBm
50mV/Div.
100ps/Div
Figure 5: Eye Diagram with an Optical Input Power of 0dBm
150mV/Div.
100ps/Div
4 DATA SHEET - Rev 2.0
12/2003



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