AM7334N Datasheet PDF - Analog Power

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AM7334N
Analog Power

Part Number AM7334N
Description MOSFET
Page 5 Pages


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Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
• Fast switching speed
• High performance trench technology
AM7334N
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
30 8.5 @ VGS = 10V
11.5 @ VGS = 4.5V
DFN3x3-8PP
Top View
ID (A)
17
15
D
S1
S2
S3
G4
8D
7D
G
6D
S
5 D N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet.co.kr
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
30
±20
±17
±12
IDM ±40
IS
TA=25oC
TA=70oC
PD
2
3.5
2
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
Maximum Junction-to-Ambienta
t <= 5 sec
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
25
50
Units
oC/W
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM7334_B
Datasheet pdf - http://www.DataSheet4U.net/



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Analog Power
AM7334N
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrentA
Drain-Source On-ResistanceA
Forward TranconductanceA
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8 A
VDS = 15 V, ID = 10 A
IS = 2.3 A, VGS = 0 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V,
ID = 10 A
VDS = 15 V, VGS = 0 V,
www.DataSheet.co.kr
f = 1MHz
VDD = 25 V, RL = 25 , ID = 1 A,
VGEN = 10 V
Limits
Unit
Min Typ Max
1 3V
±100 nA
1 uA
25
20 A
8.5
m
11.5
40 S
0.7 V
11
6
4
1302
423
171
10
5
22
4
nC
pF
nS
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
PRELIMINARY
2 Publication Order Number:
DS-AM7334_B
Datasheet pdf - http://www.DataSheet4U.net/



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Analog Power
AM7334N
Typical Electrical Characteristics (N-Channel)
50
VGS = 10V
40
30
6.0V
4.0V
20
3.0V
10
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.6
VGS = 10V
1.4 ID = 10A
1.2
1.0
0 .8
0 .6
-50
-25 0
2 5 50 75 10 0 12 5 150
T J Juncation T emperature (C)
Figure 3. On-Resistance Variation with Temperature
60
VD=5 V
50
40
-55C
25C
30
125C
20
10
0
0 1234 56
VGS Gate to S o urc e Vo ltage (V)
Figure 5. Transfer Characteristics
2
1.7
1.4
4.5V
6.0V
1.1
10V
0.8
0.5
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance with Drain Current
0.05
ID = 10A
0.04
0.03
www.DataSheet.co.kr
0.02
0.01
TA = 25oC
0
2 4 6 8 10
VGS, Gate To Source Voltage (V)
Figure 4. On-Resistance Variation with
Gate to Source Voltage
100
VGS = 0V
10
1 TA = 125oC
0.1
25oC
0.01
0.001
0.0001
0
0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
PRELIMINARY
3 Publication Order Number:
DS-AM7334_B
Datasheet pdf - http://www.DataSheet4U.net/



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Analog Power
AM7334N
Typical Electrical Characteristics (N-Channel)
10
8
6
4
2
0
0 4 8 12 16 20 24 28
Qg, Gate Charge (nC)
1600
1200
Ciss
f = 1MHz
VGS = 0 V
800
Coss
400
Crss
0
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
2.4
VDS = VGS
2.2 ID = 250mA
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (oC)
Figure 8. Capacitance Characteristics
50
SINGLE PULSE
RqJA = 125C/W
40 TA = 25C
30
www.DataSheet.co.kr
20
10
0
0.001
0.01 0.1
1
t1, TIME (sec)
10
100
Figure 9. Threshold Vs Ambient Temperature
Figure 10. Single Pulse Maximum Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
Normalized Thermal Transient Junction to Ambient
RqJA(t) = r(t) * RqJA
RqJA = 125 C/W
P(pk)
t1
t2
0.01 0.1 1 10
t1, TIME (sec)
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
100 1000
PRELIMINARY
4 Publication Order Number:
DS-AM7334_B
Datasheet pdf - http://www.DataSheet4U.net/



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