AM5922N Datasheet PDF - Analog Power

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AM5922N
Analog Power

Part Number AM5922N
Description MOSFET
Page 5 Pages


AM5922N datasheet pdf
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Analog Power
AM5922N
N-Channel 20-V (D-S) MOSFET
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
White LED boost converters
Automotive Systems
Industrial DC/DC Conversion Circuits
VDS (V)
20
PRODUCT SUMMARY
rDS(on) (mΩ)
23 @ VGS = 4.5V
33 @ VGS = 2.5V
ID(A)
7.9
6.6
DFN3x2-8L
S1 D1
G1 D1
S2 D2
G2 D2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
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VGS ±8
TA=25°C
TA=70°C
ID
7.9
6.4
IDM 30
IS 2.8
Power Dissipation a
TA=25°C
TA=70°C
PD
2.1
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
60
110
Units
°C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number:
DS_AM5922N_1A
Datasheet pdf - http://www.DataSheet4U.net/



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Analog Power
AM5922N
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±8 V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 55°C
1 uA
25
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 4.5 V
15
A
Drain-Source On-Resistance
rDS(on)
VGS = 4.5 V, ID = 6.3 A
VGS = 2.5 V, ID = 5.3 A
23
33
Forward Transconductance gfs VDS = 10 V, ID = 6.3 A
15 S
Diode Forward Voltage
VSD IS = 1.4 A, VGS = 0 V
0.72 V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 10 V, VGS = 4.5 V,
ID = 6.3 A
VDS = 10 V, RL = 1.6 Ω,
ID = 6.3 A,
VGEN = 4.5 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f = 1 MHz
www.DataSheet.co.kr
7
1.2
2.0
8
12
40
8
581
67
65
nC
ns
pF
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out
of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL
products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation
where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application,
Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated
with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part.
APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2 Publication Order Number:
DS_AM5922N_1A
Datasheet pdf - http://www.DataSheet4U.net/



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Analog Power
AM5922N
Typical Electrical Characteristics
0.05
0.04
0.03
1.8V
2V
2.5V
3V
0.02
3.5V,4V,4.5V,6V
0.01
20
TJ = 25°C
16
12
8
4
0
0 3 6 9 12 15
ID-Drain Current (A)
1. On-Resistance vs. Drain Current
0
0123
VGS - Gate-to-Source Voltage (V)
2. Transfer Characteristics
0.1
0.09
0.08
TJ = 25°C
ID = 6.3A
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0246
VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
100
TJ = 25°C
10
www.DataSheet.co.kr
1
0.1
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
VSD - Source-to-Drain Voltage (V)
4. Drain-to-Source Forward Voltage
15
6V,4.5V,4V,3.5V
12 3V
2.5V
2V
9 1.8V
6
3
0
0
© Preliminary
0.2 0.4
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
0.6
3
1000
900
800
700
600
500
400
300
200
100
0
0
F = 1MHz
Ciss
Coss
Crss
5 10 15
VDS-Drain-to-Source Voltage (V)
6. Capacitance
20
Publication Order Number:
DS_AM5922N_1A
Datasheet pdf - http://www.DataSheet4U.net/



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Analog Power
AM5922N
Typical Electrical Characteristics
8
VDS = 10V
7 ID = 6.3A
6
5
4
3
2
1
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
7. Gate Charge
100
15
2
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150
TJ -JunctionTemperature(°C)
8. Normalized On-Resistance Vs
Junction Temperature
30
10
1
0.1
0.01
0.1
10 uS
100 uS
1 mS
10 mS
100 mS
1 SEC
10 SEC
100 SEC
1 DC
Idm limit
Limited by
RDS
1 10 100
VDS Drain to Source Voltage (V)
9. Safe Operating Area
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25
20
15
10
5
0
0.001 0.01 0.1 1 10 100 1000
t1 TIME (SEC)
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
Single Pulse
0.01
0.001
0.0001
0.001
© Preliminary
RθJA(t) = r(t) + RθJA
RθJA = 110 °C /W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01 0.1 1 10
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
100
1000
4 Publication Order Number:
DS_AM5922N_1A
Datasheet pdf - http://www.DataSheet4U.net/



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