ALM-80210 Datasheet PDF - AVAGO


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ALM-80210
AVAGO

Part Number ALM-80210
Description 0.25W Analog Variable Gain Amplifier
Page 18 Pages

ALM-80210 datasheet pdf
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ALM-80210
0.25W Analog Variable Gain Amplifier
Data Sheet
Description
Avago Technologies ALM-80210 is a 0.25W Analog Con-
trolledVariable Gain Amplifier which operates from 1.6GHz
to 2.7GHz. The device provides an exceptionally high OIP3
level of 39.5dBm, which is maintained over a wide attenu-
ation range. The device features wide gain control range,
low current, excellent input and output return loss.
The ALM-80210 is housed in a miniature 5.0X5.0X1.1
mm3, 10-lead multiple-chips-on-board (MCOB) module
package. This part is suitable for the AGC/Temperature
compensation circuits application in wireless infrastruc-
ture such as Cellular/PCS/W-CDMA/WLLand and new gen-
eration wireless technologies systems.
Pin connections and Package Marking
Features
x Halogen free
x Wide Gain Control Range
x High OIP3 across attenuation range
Specifications
At 1.9GHz, Vdd = 5V, Itotal = 112mA (typ), Vbias = 4V, Vctrl = 5V @
25°C
x OIP3 = 40.5dBm
x Noise Figure = 5.2dB
x Gain = 9.8dB
x P1dB = 23.2dBm
x IRL = 13.6dB, ORL = 12.1dB
x Dynamic Range = 35dB
80210
WWYY
XXXX
Application
x CDMA, W-CDMA, WiMAX, LTE and other applications in
the 1.6GHz to 2.7GHz range.
x Transmitter and Receiver Gain Control
x Temperature Compensation Circuitry
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
6 RFout
RFin 1
Note :
Top View : Package marking provides orienation and identification
“80210” = Device Code
“WWYY“ = Workweek and Year Code
“XXXX” = Assembly Lot number
Figure 1. Simplified Schematic diagram



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ALM-80210 Absolute Maximum Rating (1)
TC = 25°C
Symbol
Id,max
Vd.,max
Vctrl_max
Vbias_max
Pd
Pin
Tj
Parameter
Drain Current
Drain Voltage,
RF output to ground
Control Voltage
Biasing Voltage
Power Dissipation
CW RF Input Power (4)
Junction Temperature
Units
mA
V
V
V
mW
dBm
°C
Absolute Maximum
140
5.5
7
15
770
25
150
Thermal Resistance (2,3)
(Vd = 5.0V) Tjc = 70°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage
2. Derate 14.3mW/°C for TL > 97°C
3. Thermal resistance measured using 150°C
Infra-Red Microscopy Technique.
4. Max rating for Pin is under maximum
attenuation condition i.e. Vctrl = 1V.
ALM-80210 Electrical Specification (1)
TC = 25°C, Zo = 50:, Vdd = 5.0V, Vbias = 4V, Vctrl = 5V unless noted
Symbol Parameter and Test Condition
Frequency Units Min. Typ. Max. stdev(4)
Idd Operating Amplifier Current Range
NF Noise Figure at minimal Attenuation
N/A
1.9GHz
2.1GHz
2.5GHz
mA 89
dB
112 134 0.002
5.2 5.9 0.088
5.4
5.7
Gain Gain at minimal Attenuation
OIP3(2) Output Third Order Intercept Point
1.9GHz
2.1GHz
2.5GHz
1.9GHz
2.1GHz
2.5GHz
8.2
dB
36
dBm
9.8 11.2 0.148
9.7
9.5
40.5 0.616
39.5
39.8
P1dB
Output Power at 1dB Gain Compression
1.9GHz
2.1GHz
2.5GHz
22
dBm
23.5
23..5
23.3
0.112
IRL Input Return Loss
1.9GHz
2.1GHz
2.5GHz
dB
13.6
14.9 NA
18.5
ORL Output Return Loss
1.9GHz
2.1GHz
2.5GHz
dB
12.1
14.3 NA
14.8
ISO Isolation
1.9GHz
2.1GHz
2.5GHz
dB
28.6
27.7 NA
26.7
Vbias
Attenuator Bias Voltage
N/A V 2.7 4 5 N/A
Vctrl Gain Variation Control Voltage
N/A V 1 – 5 NA
' Gain
Gain Variation Range (from Vctrl=1V to 5V)
1.9GHz
2.1GHz
2.5GHz
dB
35.0
35.1 NA
34.3
Note :
1. Measurements obtained from a test circuit described in Figure 53.
2. OIP3 test condition: F1 – F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band.
3. Standard deviation data are based on at least 1000 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower specification limits.
2



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ALM-80210 Product Consistency Distribution at 1900MHz
TC = 25°C, Vdd = 5.0V, Vbias = 4.0V
LSL USL
CPK=3.1
USL
CPK=2.2
.09 .10
.11 .12
.13
Figure 2. Itotal at 1900MHz
4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9
Figure 3. NF at 1900MHz
LSL USL LSL
CPK=3.2
CPK=2.7
9
Figure 4. Gain at 1900MHz
10
11 36 37 38 39 40 41 42 43 44 45 46 47 48 49
Figure 5. OIP3 at 1900MHz
LSL
22 23
Figure 6. P1dB at 1900MHz
CPK=4.9
24 25
Note :
1. Statistics distribution determined from a sample size of 1000 parts
taken from 2 different wafers.
2. Future wafers allocation to this product may have typical values
anywhere between the minimum and maximum specification limits.
3. Measurements are made on production testboard, which represents
a trade-off between optimal OIP3, P1dB and NF. Circuit losses have
been de-embedded from actual measurements.
3



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ALM-80210 Application Circuit Data for 1900MHz
TC = 25°C, Vdd = 5.0V, Vbias = 4.0V
44
42
40
38
36
34
85°C
32 25°C
-40°C
30
1 1.5 2 2.5 3 3.5 4 4.5 5
Vctrl (V)
Figure 7. OIP3 vs Control Voltage and Temperature at 1900MHz
25.0
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
85°C
25°C
16.0 -40°C
15.0
1 1.5 2 2.5 3 3.5 4 4.5 5
Vctrl (V)
Figure 8. P1dB vs Control Voltage and Temperature at 1900MHz
15
10
5
0
-5
-10
-15
-20 85°C
25°C
-25 -40°C
-30
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vctrl (V)
Figure 9. Gain vs Control Voltage and Temperature at 1900MHz
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
-19 85°C
-20 25°C
-21 -40°C
-22
1 1.5 2 2.5 3 3.5 4 4.5 5
Vctrl (V)
Figure 10. IRL vs Control Voltage and Temperature at 1900MHz
-8
-9
-10
-11
-12
-13
-14
-15 85°C
25°C
-16 -40°C
-17
1 1.5 2 2.5 3 3.5 4 4.5 5
Vctrl (V)
Figure 11. ORL vs Control Voltage and Temperature at 1900MHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
85°C
25°C
-65 -40°C
-70
1 1.5 2 2.5 3 3.5 4 4.5 5
Vctrl (V)
Figure 12. Isolation vs Control Voltage and Temperature at 1900MHz
4




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