ADS1D80 Datasheet PDF - ADV


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ADS1D80
ADV

Part Number ADS1D80
Description 4 Quadrants Triacs
Page 6 Pages

ADS1D80 datasheet pdf
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ADV 
                                                                                    ADS1D60/80
4 Quadrants Triacs
General Description
This device is suitable for low power AC switching application,
phase control application such as fan speed and temperature
modulation control , lighting control and static switching relay
also designed for use in MPU interface, TTLlogic.
Features
Repetitive Peak Off-State Voltage: 600Vand800V
R.M.S On-State Current ( IT(RMS)= 0.8 A )
These Devices are Pb-Free and are RoHS Compliant
2.T2
3.Gate
1.T1
1 32
TO-92
Absolute Maximum Ratings ( Tj = 25°C unless otherwise specified )
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 51°C
Conditions
ADS1D60
ADS1D80
Surge On-State Current
tp =20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 110°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 110°C
Average Gate Power Dissipation(tp=10ms,Tj=80°C)
Peak Gate Power Dissipation(tp=10ms,Tj=80°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
0.8
8/8.3
0.32
20
1
0.1
1
- 40 ~ 110
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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Feb,2013 -Rev.3.02



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                                                                                    ADS1D60/80
Electrical Characteristics( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Non Trigger Gate
Q1-Q2-Q3-Q4
Voltage
Q1-Q2-Q3-Q4 GateTrigger Voltage
Q1-Q2-Q3
Q4
GateTrigger Current
Q1-Q2-Q3-Q4 Holding Current
Q1-Q3-Q4
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Change of
Commutating Voltage
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 110°C
ITM = 1.1A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 110°C
VD = 12V RL = 33
IT = 0.2A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 110°C
(dI/dt)c=-0.3A/ms
Tj = 110°C
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
ADS1D60/80
5
0.1
1.5
0.2
1.5
5
7
5
10
20
25
0.5
70
150
Unit
uA
mA
V
V
V
mA
mA
mA
V/μs
V/μs
°C/W
°C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
RL
VD VD
A
V
RG
Q3(T2-G-)
T2-
A
V
RG
Q4(T2-G+)
 
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                                                                                    ADS1D60/80
FIG.2: Maximum on-state power dissipation
1.0
FIG.3: Typical RMS on-state current VS
Allowable case Temperature
150
0.8 120
0.6 90
0.4
360° Full Cycle
0.2
60
360° Full Cycle
30
0
0.2 0.4
0.6 0.8 1.0
Power Dissipation(W)
FIG.4: Gate trigger current VS Junction
temperature
150
125
0
0 0.2 0.4 0.6 0.8
R.M.S On-state Current(A)
FIG.5: Rated surge
( Non-Repetitive)
102
on-state
1.0
current
100
f=50Hz
75
50 10
25
0
-25
-50
0 50 100 150 200 250
IGT(Tj)/IGT(25°C) x 100(%)
FIG.6: On-state characteristics(Max)
4
3.5
1
01
Tj=25°C Max
23 4 56
ITSM(A),Surge On-State Current
78
3
2.5
2
1.5
1
0.510-1
(1)Tj=25°C Max
(2)Tj=125°C Max
(1)
(2)
100
ITM(A),On-State Current
101
 
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ADV 
                                                                                    ADS1D60/80
FIG.7:Holding current and Latching current VS
Junction temperature
150
125
100
75
50
25
0
-25
-50
0 50 100 150 200 250
IH,IL(Tj)/IH,IL(25°C) x 100(%)
FIG.8: Gate trigger voltage VS Junction
temperature
150
125
100
75
50
25
0
-25
-50
0 50 100 150 200 250
VGT(Tj)/VGT(25°C) x 100(%)
 
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