ACE2302 Datasheet PDF - ACE Technology

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ACE2302
ACE Technology

Part Number ACE2302
Description N-Channel Enhancement Mode MOSFET
Page 7 Pages


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ACE2302                                                                                                                                                                           
                                              Technology N-Channel Enhancement Mode MOSFET
Description
The ACE2302 is the N-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
20V/3.6A, RDS(ON)=80m@VGS=4.5V
20V/3.1A, RDS(ON)=95m@VGS=2.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Application
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150)
TA=25
TA=70
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
20 V
±20 V
3.2
2.6
A
10 A
1.6 A
1.25
0.8
W
150 OC
-55/150 OC
100 OC/W
VER 1.2 1 



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ACE2302                                                                                                                                                                           
                                              Technology N-Channel Enhancement Mode MOSFET
Packaging Type
SOT-23-3
3
12
Pin Symbol Description
1G
Gate
2S
Source
3D
Drain
Ordering information
Selection Guide
ACE2302 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
Electrical Characteristics
TA=25, unless otherwise noted
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
Drain-Source On-Resistance
Forward Transconductance
RDS(ON)
gfs
Conditions
Static
VGS=0V, ID=250 uA
VD=VGS, ID=250uA
VDS=0V,VGS=±12V
VDS=20V, VGS=0V
VDS=24V, VGS=0V TJ=55
VDS5V, VGS=4.5V
VDS5V, VGS=2.5V
VGS=4.5V, ID=3.6A
VGS=2.5V, ID=3.1A
VDS=5V,ID=3.6A
Min. Typ. Max. Unit
20
0.45
6
4
1.2
±100
1
10
V
nA
uA
A
0.050 0.080
0.070 0.095
10 S
VER 1.2 2



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ACE2302                                                                                                                                                                           
                                              Technology N-Channel Enhancement Mode MOSFET
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS=1.6A, VGS=0V
Dynamic
VDS=10V, VGS=4.5V, ID=3.6A
VDS=10V, VGS=0V, f=1MHz
VDD=10V, RL=5.5, ID=3.6A, VGEN=4.5V,
RG=6
0.85 1.2 V
5.4 10
0.65
nC
1.4
340
115 pF
33
12 25
36
34
60
60
nS
10 25
Typical Performance Characteristics
Output Characteristics
Transfer Characteristics
VDS-Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS-Gate-to-Source Voltage (V)
Capacitance
ID-Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VER 1.2 3



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ACE2302                                                                                                                                                                           
                                              Technology N-Channel Enhancement Mode MOSFET
Gate Charge
On-Resistance vs. Junction Temperature
Qg-Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ-Junction Temperature ()
On-Resistance vs. Gate-to-Source Voltage
VSD-Source-to-Drain Voltage (V)
Threshold Voltage
VGS-Gate-to-Source Voltage (V)
Single Pulse Power
TJ-Temperature()
Time (sec)
VER 1.2 4



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