ACE2301 Datasheet PDF - ACE Technology

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ACE2301
ACE Technology

Part Number ACE2301
Description P-Channel Enhancement Mode MOSFET
Page 5 Pages


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ACE2301www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
VDS=-20V
RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ
RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1)
Maximum Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient Thermal Resistance (PCB mounted)2)
VDS
VGS
ID
IDM
PD
TJ
TSTG
RθJA
-20 V
±12 V
-2.2 A
-8 A
1.25 W
0.8
-55 to 150 OC
-55 to 150 OC
140 OC/W
Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
2.1-in2 2oz Cu PCB board.
3.Guaranteed by design; not subject to production testing.
VER 1.2 1



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Packaging Type
SOT-23-3
3
12
ACE2301www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Pin Symbol Description
1G
Gate
2S
Source
3D
Drain
Ordering information
Selection Guide
ACE2301 XX + H
Halogen - free
Pb - free
BM : SOT-23-3
VER 1.2 2



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ACE2301www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Electrical Characteristics
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Trans conductance
BVDSS
VGS=0V, ID=250uA
RDS(ON)
VGS=-4.5V, ID=-2.8A
RDS(ON)
VGS=-2.5V, ID=-2.0A
VGS(th)
VDS=VGS, ID=250uA
IDSS VDS=-9.6V, VGS=0V
IGSS VGS=±8V, VDS=0V
Gfs VDS=-5V, ID=-2.8A
Dynamic3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
VDS=-6V, ID=-2.8A
VGS=-4.5V
Td(on)
Tf
td(off)
tf
VDD=-6V,RL=6Ω
ID=-1A, VGEN=-4.5V
RG=6Ω
Ciss VDS=-6V, VGS=0V
Coss F=1.0MHz
Crss
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
VSD IS=-1.6A,VGS=0V
Note: Pulse test pulse width<=300us, duty cycle<=2%.
Min. Typ. Max. Unit
-20 V
70.0 100.0 mΩ
85.0 150.0
-0.4 -0.9 V
-1 uA
±100 nA
6.5 S
5.8
0.85
1.7
13
36
42
34
415
223
87
10
25
60
70
60
nC
ns
pF
-1.6 A
-1.2 V
VER 1.2 3



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ACE2301www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Packing Information
SOT-23-3
VER 1.2 4



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