ABA-52563 Datasheet PDF - Agilent

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ABA-52563
Agilent

Part Number ABA-52563
Description 3.5 GHz Broadband Silicon RFIC Amplifier
Page 8 Pages


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Agilent ABA-52563
3.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Description
Agilent’s ABA-52563 is an
economical, easy-to-use, inter-
nally 50-ohm matched silicon
monolithic amplifier that offers
excellent gain and flat broadband
response from DC to 3.5 GHz.
Packaged in an ultraminiature
industry-standard SOT-363
package, it requires half the board
space of a SOT-143 package.
At 2 GHz, the ABA-52563 offers a
small-signal gain of 21.5 dB,
output P1dB of 9.8 dBm and
19.9 dBm output third order
intercept point. It is suitable for
use as buffer amplifiers for
wideband applications. They are
designed for low cost gain blocks
in cellular applications, DBS
tuners, LNB and other wireless
communications systems.
Surface Mount Package
SOT-363 /SC70
Pin Connections and
Package Marking
GND 1
GND 2
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. “x” is character to identify
date code.
Features
• Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating
frequency
• 9.8 dBm output P1dB
• 3.3 dB noise figure
• Unconditionally stable
• Single 5V supply (Id = 35 mA)
• Lead-free option available
Applications
• Amplifier for cellular, cordless,
special mobile radio, PCS, ISM,
wireless LAN, DBS, TVRO, and TV
tuner applications
ABA-52563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon
process with self-aligned submi-
cron emitter geometry. The
process is capable of simulta-
neous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
Simplified Schematic
Vcc
RF
Input
Ground 2
Ground 3
RF
Output
& Vcc
Ground 1



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ABA-52563 Absolute Maximum Ratings[1]
Symbol Parameter
Vcc Device Voltage, RF output to ground (T = 25°C)
Pin CW RF Input Power (Vcc = 5V)
Pdiss Total Power Dissipation[3]
Tj Junction Temperature
TSTG Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
+7
+20
0.4
150
-65 to 150
Thermal Resistance[2] (Vcc = 5V):
θjc = 106°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
Electrical Specifications
Tc = +25°C, Zo = 50 , Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ. Max.
Std Dev.
Gp[1]
Gp
NF[1]
P1dB[1]
Power Gain (|S21|2)
Power Gain Flatness,
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Noise Figure
Output Power at 1dB Gain Compression
dB 20
dB
dB
dBm
21.5
0.5
2.1
3.3 4
9.8
0.2
0.12
0.15
OIP3[1]
Output Third Order Intercept Point
dBm
19.9 0.18
VSWRin[1]
VSWRout[1]
Icc[1]
Input VSWR
Output VSWR
Device Current
1.2
1.4
mA
35 43
0.5
td[1] Group Delay
ps 150
Notes:
1. Measurements taken on 50test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Cblock
RF Output
RF Input
Cblock
RFC
Cbypass
Vcc
Figure 1. ABA-52563 Production Test Circuit.
2



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ABA-52563 Typical Performance
Tc = +25°C, Zo = 50, Vcc = 5V unless stated otherwise.
23 23
22 22
21 21
20 20
19
4.5V
5V
18 5.5V
17
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
19
-40°C
+25°C
18 +85°C
17
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
4.5
4
3.5
3
4.5V
2.5
5V
5.5V
2
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency and
Voltage.
6
5
4
3
-40°C
2
+25°C
+85°C
1
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
14
12
10
8
6
4.5V
5V
4 5.5V
2
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
16
12
8
4 -40°C
+25°C
+85°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
3



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ABA-52563 Typical Performance, continued
Tc = +25°C, Zo = 50, Vcc = 5V unless stated otherwise.
40
35
30
25
20
15
10 4.5V
5V
5 5.5V
0
0 0.5 1 1.5 2 2.5 3 3.5
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and
Voltage.
4
35
30
25
20
15
10 -40°C
+25°C
5 +85°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 9. Output IP3 vs. Frequency and
Temperature.
2.0
1.8 VSWR IN
VWSR OUT
1.6
1.4
1.2
1.0
0.8
01 2345
FREQUENCY (GHz)
Figure 10. Input and Output VSWR vs.
Frequency.
6
70
60
-40°C
50 +25°C
+85°C
40
30
20
10
0
012 3456 7
VOLTAGE (V)
Figure 11. Supply Current vs. Voltage and
Temperature.
4



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