ABA-31563 Datasheet PDF - AVAGO

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ABA-31563
AVAGO

Part Number ABA-31563
Description 3.5 GHz Broadband Silicon RFIC Amplifier
Page 7 Pages


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ABA-31563
3.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Description
Avago’s ABA-31563 is an economical, easy-to-use,
internally 50matched, silicon monolithic broadband
amplifier that offers excellent gain and broadband
response from DC to 3.5 GHz. Packaged in an ultra-
miniature SOT-363 package, it requires half the board
space of a SOT-143 package.
At 2 GHz, the ABA-31563 offers a small-signal gain
of 21.5 dB, output P1dB of 2.2 dBm and 13.1 dBm
output third order intercept point. It is suitable for
use as wideband applications. They are designed for
low cost gain blocks in cellular applications, DBS tun-
ers, LNB and other wireless communication systems.
Features
Operating Frequency DC ~ 3.5GHz
• 21.5 dB Gain
• VSWR < 2.0 throughout operating frequency
• 2.2 dBm Output P1dB
• 13.1 dBm Output IP3
• 3.8 dB Noise Figure
• Unconditionally Stable
• Single 3V Supply (Id = 14 mA)
• Lead-free
ABA-31563 is fabricated using Avago’s HP25 silicon
bipolar process, which employs a double-diffused
single polysilicon process with self-aligned submicron
emitter geometry. The process is capable of simulta-
neous high fT and high NPN breakdown (25 GHz fT at
6V BVCEO). The process utilizes industry standard
device oxide isolation technologies and submicron alu-
minum multilayer interconnect to achieve superior
performance, high uniformity, and proven reliability.
Surface Mount Package: SOT-363/SC70
Applications
Amplifier for Cellular, Cordless, Special Mobile Radio,
PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner
Applications
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Pin Connections and Package Marking
GND 1
GND 2
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. xis the date code.
Simplified Schematic
Vcc
RF
Input
Ground 2
Ground 3
RF
Output
& Vcc
Ground 1



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ABA-31563 Absolute Maximum Ratings[1]
Symbol Parameter
Vcc Device Voltage, RF output to ground (T = 25°C)
Pin CW RF Input Power (Vcc = 3V)
Pdiss Total Power Dissipation[3]
Tj Junction Temperature
TSTG Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
6
15
0.3
150
-65 to 150
Thermal Resistance[2] (Vcc = 3V)
θj-c = 125°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25°C. Derate 2.3 mW/°C for Tc > 120.8°C.
Electrical Specifications
Tc = +25°C, Zo = 50 , Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ. Max. Std Dev.
Gp[1]
Gp
NF[1]
P1dB[1]
OIP3[1]
VSWRin[1]
VSWRout[1]
Icc[1]
Td[1]
Power Gain (|S21|2)
Power Gain Flatness,
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
dB 20.0 21.5
dB 0.2
1.3
dB 3.8 4.8
dBm 2.2
dBm 13.1
<1.5
<1.5
mA 14 16
ps 140
Notes:
1. Measurements taken on 50test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Cblock
1 nF
RF Output
RF Input
Cblock
1 nF
RFC
33 nH
Cbypass
100 pF
Vcc
Cbypass
1000 pF
Figure 1. ABA-31563 Production Test Circuit.
2



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ABA-31563 Typical Performance
Tc = +25°C, Zo = 50, Vcc = 3V unless stated otherwise.
23 23
22 22
21 21
20 20
19
3.5V
3V
18 2.7V
17
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
19
+85°C
+25°C
18 -40°C
17
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
6
3.5V
5.5 3V
2.7V
5
4.5
4
3.5
3
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency and
Voltage.
6
5.5 +85°C
+25°C
-40°C
5
4.5
4
3.5
3
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
6
4
2
0
3.5V
-2 3V
2.7V
-4
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
6
4
2
0
+85°C
-2 +25°C
-40°C
-4
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
3



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ABA-31563 Typical Performance, continued
Tc = +25°C, Zo = 50, Vcc = 3V unless stated otherwise.
20 20
16 16
12 12
8
3.5V
4 3V
2.7V
0
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and
Voltage.
8
+85°C
4 +25°C
-40°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 9. Output IP3 vs. Frequency and
Temperature.
1.8
VSWR IN
VWSR OUT
1.6
1.4
1.2
1.0
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Figure 10. Input and Output VSWR vs.
Frequency.
70
60
+85°C
50 +25°C
-40°C
40
30
20
10
0
012 3456 7
VOLTAGE (V)
Figure 11. Supply Current vs. Voltage and
Temperature.
4



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