A968B Datasheet PDF - ISC


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A968B
ISC

Part Number A968B
Description 2SA968B
Page 3 Pages

A968B datasheet pdf
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA968 2SA968A 2SA968B
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2238
·High breakdown votage
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
www.DataSheet.co.kr
CONDITIONS
2SA968
VCBO
Collector-base voltage
2SA968A Open emitter
2SA968B
2SA968
VCEO
Collector-emitter voltage
2SA968A Open base
2SA968B
VEBO
Emitter-base voltage
Open collector
IC Collector current
IE Emitter current
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
-160
-180
-200
-160
-180
-200
-5
-1.5
1.5
25
150
-55~150
UNIT
V
V
V
A
A
W
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA968 2SA968A 2SA968B
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA968
2SA968A IC=-10mA; IB=0
2SA968B
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE Base-emitter on voltage
IC=-500mA ; VCE=-5V
ICBO Collector cut-off current
VCB=-160V ;IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE DC current gain
Cob Output capacitance
IC=-100mA ; VCE=-5V
www.DataSheet.co.kr
IE=0 ; VCB=-10V,f=1MHz
fT Transition frequency
IC=-100mA ; VCE=10V
MIN TYP. MAX UNIT
-160
-180
V
-200
-5 V
-1.5 V
-1.0 V
-1.0 μA
-1.0 μA
70 240
30 pF
100 MHz
‹ hFE Classifications
OY
70-140
120-240
2
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Inchange Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SA968 2SA968A 2SA968B
www.DataSheet.co.kr
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Datasheet pdf - http://www.DataSheet4U.net/




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