A872A Datasheet PDF - Hitachi Semiconductor


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A872A
Hitachi Semiconductor

Part Number A872A
Description 2SA872A
Page 7 Pages

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2SA872, 2SA872A
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SC1775/A
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base



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2SA872, 2SA872A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA872
–90
–90
–5
–50
300
150
–55 to +150
2SA872A
–120
–120
–5
–50
300
150
–50 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
2SA872
Item
Symbol Min Typ
Collector to emitter
breakdown voltage
V(BR)CEO –90 —
Collector cutoff current ICBO
——
——
DC current tarnsfer ratio hFE1*1 250 —
2SA872A
Max Min Typ
— –120 —
–0.5 —
——
800 250
hFE2 160 — — 160 —
Base to emitter voltage VBE
— — –0.75 — —
Collector to emitter
saturation voltage
VCE(sat)
–0.5 —
Gain bandwidth product fT
— 120 — —
120
Collector output
capacitance
Noise figure
Cob — 1.8 — — 1.8
NF — — 5.0 — —
— — 1.5 —
Note: 1. The 2SA872/A is grouped by hFE1 as follows.
DE
250 to 500 400 to 800
Max Unit Test conditions
—V
IC = –1 mA, RBE =
µA
–0.5 µA
800
–0.75 V
–0.5 V
— MHz
— pF
VCB = –75 V, IE = 0
VCE = –100 V, IE = 0
VCE = –12 V,
IC = –2 mA
VCE = –12 V,
IC = –0.1 mA
VCE = –12 V,
IC = –2 mA
IC = –10 mA,
IB = –1 mA
VCE = –12 V,
IC = –2 mA
VCB = –25 V, IE = 0,
f = 1 MHz
5.0 dB
1.5 dB
VCE = –6 V, f = 10 Hz
IC = –50 µA
Rg = 50 k
f = 1 kHz
2



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Maximum Collector Dissipation Curve
300
200
100
0 50 100 150
Ambient Temperature Ta (°C)
2SA872, 2SA872A
Typical Output Characteristics
–10 –22 –20–18
–8
–16
–14
–12
–6 –10
–8
–4 –6
–4
–2 –2 µA
IB = 0
0 –10 –20 –30 –40 –50
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
–10
–3
–1.0
VCE = –12 V
–0.3
Ta =100°C 75 50 25 0 –25
–0.1
–0.03
–0.01
–0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8
Base to Emitter Voltage VBE (V)
1,000
800
600
400
DC Current Transfer Ratio vs. Collector Current
VCE = –12 V
Ta = 100°C
75
50
25
0
–25
200
0
–0.01 –0.03
–0.1 –0.3 –1.0 –3
Collector Current IC (mA)
–10 –30
3



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2SA872, 2SA872A
1,000
300
Gain Bandwidth Product vs. Collector Current
VCE = –12 V
100
30
10
5
–0.01 –0.03
–0.1 –0.3 –1.0 –3 –10
Collector Current IC (mA)
–30
Collector Output Capacitance vs.
Collector to Base Voltage
50
20
IE = 0
f = 1 MHz
10
5
2
1.0
0.5
–1 –3 –10 –30 –100
Collector to Base Voltage VCB (V)
Contours of Constant Noise Figure (1)
100
30
VCE = –6 V
f = 10 Hz
10
3
1.0
NF
2
=
1
dB
0.3
0.1
–0.01
–0.1 –1.0
Collector Current IC (mA)
–10
4




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