A844 Datasheet PDF - FGX


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A844
FGX

Part Number A844
Description PNP silicon
Page 1 Pages

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■■APPLICATIONGeneral Purpose Amplifier Applications..
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING UNIT
VCBO -55 V
VCEO -55 V
VEBO
-5
V
IC -100 mA
PC 300 mW
TJ 150
Tstg 55~150
A844
—PNP silicon —
■■ELECTRICAL CHARACTERISTICSTa=25℃)
PARAMETER
SYMBOL MIN.
TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 160
500 VCE= -12VIc= -2mA
Collector Cut-off Current
ICBO
-0.1 µA VCB= -18VIE=0
Emitter Cut-off Current
IEBO
-0.05 µA VEB= -2VIc=0
Collector-Base Breakdown Voltage BVCBO
-55
V Ic= -0.1mAIE=0
Collector-Emitter Breakdown Voltage BVCEO
-55
V Ic= -1mAIB=0
Emitter-Base Breakdown Voltage
BVEBO
-5
V IE= -0.1mAIc=0
Base-Emitter Voltage
VBE
-0.66 -0.75 V VCE= -12VIc= -2mA
Collector-Emitter Saturation Voltage VCE(sat)
-0.1 -0.5 V Ic= -10mAIB= -1mA
Gain bandwidth product
fT
200 MHz Ic= -2mAVCE= -12V
Common Base Output Capacitance Cob
2 PF VCB= -10V, IE=0, f = 1MHz
■■hFE Classification
Classification
hFE
C
160~320
D
250~500




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