A2057 Datasheet PDF - Panasonic Semiconductor


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A2057
Panasonic Semiconductor

Part Number A2057
Description 2SA2057
Page 3 Pages

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Power Transistors
2SA2057
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
Features
High speed switching (tstg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)
Superior forward current transfer ratio hFE linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
6
3
6
20
2.0
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
A
A
W
°C
°C
2.54±0.30
5.08±0.50
123
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VEB = −6 V, IC = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −3 A
IC = −3 A, IB = − 0.375 A
VCE = −10 V, IC = − 0.1 A, f = 10 MHz
IC = −1 A, Resistance loaded
IB1 = − 0.1 A, IB2 = 0.1 A
VCC = 50 V
60
120
40
100
100
1
320
0.5
90
0.15 0.30
0.4 0.7
0.10 0.15
V
µA
µA
mA
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1 120 to 250 160 to 320
Publication date: January 2003
SJD00284BED
1
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2SA2057
PC Ta
35
(1) TC = Ta
(2) Without heat sink
30
25
(1)
20
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VBE
VCE = −4 V
6
Ta = 100°C
25°C
4
2 25°C
VCE(sat) IC
10 IC / IB = 8
1
0.1
25°C
0.01
Ta = 100°C
25°C
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
0.001
0.01
0.1 1
Collector current IC (A)
10
10 000
hFE IC
VCE = −4 V
1 000
25°C
100
Ta = 100°C
25°C
Safe operation area
100
Non repetitive pulse
TC = 25°C
10 ICP
t = 10 ms
IC
1
t=1s
t = 1 ms
10 0.1
1
0.01
0.1 1
Collector current IC (A)
10
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
Rth t
1 000 Ta = 25°C
100
(1)
(2)
10
1
0.1
0.001
0.01
(1) Without heat sink
(2) With 100 × 100 × 2 mm Al
0.1 1 10 100 1 000
Time t (s)
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL




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