A1350 Datasheet PDF - Hitachi Semiconductor

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A1350
Hitachi Semiconductor

Part Number A1350
Description 2SA1350
Page 5 Pages


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2SA1350
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
HF amplefier
Outline
SPAK
12 3
1. Emitter
2. Collector
3. Base



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2SA1350
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–40
–30
–5
–100
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
–40
Collector to emitter breakdown V(BR)CEO
voltage
–30
Emitter to base breakdown
voltage
V(BR)EBO
–5
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
I CBO
I EBO
hFE*1
VBE
VCE(sat)
100
Gain bandwidth product
Collector output capacitance
fT
Cob
Noise figure
NF —
Typ
200
1.0
Note: 1. The 2SA1350 is grouped by hFE as follows.
B CD
100 to 200 160 to 320 250 to 500
Max Unit Test conditions
—V
IC = –10 µA, IE = 0
—V
IC = –1 mA, RBE =
—V
IE = –10 µA, IC = 0
–0.5
–0.5
500
–0.75
–0.2
µA
µA
V
V
VCB = –18 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
— MHz VCE = –12 V, IC = –2 mA
4.5 pF
VCB = –10 V, IE = 0, f = 1 MHz
5.0 dB
VCE = –6 V, IC = –0.1 mA
Rg = 1 k, f = 1 kHz
See characteristic curves of 2SA1031.
2



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Maximum Collector Dissipation Curve
300
200
100
0 50 100 150
Ambient Temperature Ta (°C)
2SA1350
3



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4.2 Max
2.2 Max
Unit: mm
0.6 Max
0.45 ± 0.1
0.4 ± 0.1
1.27 1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
SPAK
0.10 g



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