A1145 Datasheet PDF - Toshiba

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A1145
Toshiba

Part Number A1145
Description Transistor
Page 5 Pages


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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1145
Audio Frequency Amplifier Applications
Complementary to 2SC2705.
Small Collector Output Capacitance: Cob = 2.5 pF (typ.)
High Transition Frequency: fT = 200 MHz (typ.)
2SA1145
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 mA
Base current
IB 5 mA
Collector power dissipation
PC 800 mW
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TO-92MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −150 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −1 mA, IB = 0
hFE (Note) VCE = −5 V, IC = −10 mA
VCE (sat) IC = −10 mA, IB = −1 mA
VBE VCE = −5 V, IC = −10 mA
fT VCE = −5 V, IC = −10 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
A1145
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SA1145
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
150
V
80 240
⎯ ⎯ −1.0 V
⎯ ⎯ −0.8 V
200 MHz
2.5 pF
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IC – VCE
50
0.5
0.4
Common emitter
Ta = 25°C
40
0.3
30
20
10
0
0
0.2
IB = −0.1 mA
0
2 4 6 8 10 12
Collector-emitter voltage VCE (V)
14
2SA1145
IC – VCE
50
Common emitter
VCE = −5 V
40
30 Ta = 100°C
25
25
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
hFE – IC
1000
300
Ta = 100°C
25
100
25
30
Common emitter
VCE = −5V
10
0.3
1
3
10 30 50
Collector current IC (mA)
1000
300
100
fT – IC
VCE = −10V
5
3
Common emitter
Ta = 25°C
1
0.5 1
3
10 30
Collector current IC (mA)
100
VCE (sat) – IC
3
Common emitter
IC/IB = 10
1
0.5
0.3
0.1
0.05
0.03
0.3
Ta = 100°C
25
25
1 3
10 30
Collector current IC (mA)
100
Cob – VCB
300
IE = 0
f = 1 MHz
Ta = 25°C
10
5
3
1
0.3
0
0.5 1 3 10 30
Collector-base voltage VCB (V)
100
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1200
800
PC – Ta
No heat sink
400
0
0 40 80 120 160
Ambient temperature Ta (°C)
2SA1145
4 2006-11-09



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