9R340C Datasheet PDF - Infineon

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9R340C
Infineon

Part Number 9R340C
Description IPB90R340C3
Page 10 Pages


9R340C datasheet pdf
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CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for industrial applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
Product Summary
VDS @ TJ=25°C
RDS(on),max @TJ=25°C
Qg,typ
IPB90R340C3
900 V
0.34 W
94 nC
PG-TO263
CoolMOS900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• SMPS
• PC Silverbox
• Lighting
• Solar
Type
IPB90R340C3
Package
PG-TO263
Marking
9R340C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current 2)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS
Avalanche energy, repetitive t AR 2),3) E AR
Avalanche current, repetitive t AR 2),3) I AR
I D=3.1 A, V DD=50 V
I D=3.1 A, V DD=50 V
MOSFET dv /dt ruggedness
dv /dt V DS=0...400 V
Gate source voltage
V GS static
AC (f>1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T J, T stg
Rev. 2.0
page 1
Value
15
9.5
34
678
1
3.1
50
±20
±30
208
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2012-04-16



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Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current 2)
Reverse diode dv /dt 4)
Symbol
Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPB90R340C3
Value
9.2
34
4
Unit
A
V/ns
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction -
ambient
R thJA
R thJA
Soldering temperature, only reflow
soldering allowed; part not qualified
for direct wave soldering but bottom
side PCB wave soldering is allowed
T sold
SMD version, device
on PCB: at minimum
footprint
SMD version, device
on PCB: at 6 cm²
cooling area 5)
reflow MSL1
-
-
-
-
- 0.6 K/W
- 62
35 -
- 260 °C
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Rev. 2.0
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=1 mA
I DSS
I GSS
V DS=900 V, V GS=0 V,
T j=25 °C
V DS=900 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=9.2 A,
T j=25 °C
V GS=10 V, I D=9.2 A,
T j=150 °C
R G f =1 MHz, open drain
page 2
900
2.5
-
-
-
-
-
-
- -V
3 3.5
- 2 µA
20 -
- 100 nA
0.28 0.34 W
0.76 -
1.3 - W
2012-04-16



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IPB90R340C3
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related 6)
C o(er)
Effective output capacitance, time
related 7)
C o(tr)
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
Fall time
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 500 V
V DD=400 V,
V GS=10 V, I D=9.2A,
R G=23.1 W
-
-
-
-
-
-
-
-
2400
120
71
280
70
20
400
25
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs - 11 - nC
Q gd V DD=400 V, I D=9.2 A, - 41 -
Q g V GS=0 to 10 V
- 94 -
V plateau
- 4.6 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=9.2 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.8 1.2 V
- 510 - ns
- 11 - µC
- 41 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T J,max
3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4) ISD≤ID, di/dt≤200A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
5) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 50% VDSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.
Rev. 2.0
page 3
2012-04-16



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1 Power dissipation
P tot=f(T C)
250
200
150
100
50
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
101
100
IPB90R340C3
1 µs
10 µs
100 µs
1 ms
10 ms
DC
0
0 25 50 75 100 125
TC [°C]
3 Max. transient thermal impedance
ZthJC=f(tP)
parameter: D=t p/T
100
10-1
150 1
10 100
VDS [V]
4 Typ. output characteristics
I D=f(V DS); T J=25 °C
parameter: V GS
50
1000
10 V
8V
40
0.5 6 V
10-1
0.2
0.1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
tp [s]
10-1
30
20
10
0
0
5.5 V
5V
4.5 V
4V
5 10 15 20 25
VDS [V]
Rev. 2.0
page 4
2012-04-16



9R340C datasheet pdf
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9R340C pdf
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Related : Start with 9R340 Part Numbers by
9R340C IPB90R340C3 9R340C
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9R340C pdf

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