9NK60Z Datasheet PDF - STMicroelectronics


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9NK60Z
STMicroelectronics

Part Number 9NK60Z
Description N-Channel Enhancement Mode MOSFET
Page 19 Pages

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STB9NK60Z, STP9NK60Z, STP9NK60ZFP
N-channel 600 V, 0.85 Ω typ., 7 A Zener-protected SuperMESH™
Power MOSFET in D²PAK, TO-220 and TO-220FP packages
Datasheet production data
Features
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
VDS RDS(on) max ID PTOT
600
V
125 W
0.95 Ω 7 A
30 W
Extremely high dv/dt capability
Improved ESD capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
TAB
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
Applications
Switching applications
Figure 1. Internal schematic diagram
, TAB
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
SC15010
Table 1. Device summary
Order codes
STB9NK60ZT4
STP9NK60Z
STP9NK60ZFP
Marking
B9NK60Z
P9NK60Z
P9NK60ZFP
Package
D2PAK
TO-220
TO-220FP
Packaging
Tube
January 2013
This is information on a product in full production.
Doc ID 8799 Rev 3
1/19
www.st.com
19



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Contents
Contents
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves)
............................ 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19 Doc ID 8799 Rev 3



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STB9NK60Z, STP9NK60Z, STP9NK60ZFP
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating Factor
ESD
dv/dt(3)
Gate-source human body model (R=1,5 kΩ,
C=100 pF)
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t = 1 s,TC =
25 °C)
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD 7A, di/dt 200A/µs,VDD V(BR)DSS, Tj TJMAX
Value
Unit
D²PAK, TO-220 TO-220FP
600
± 30
7
4.4
28
125
1
7(1)
4.4(1)
28(1)
30
0.24
V
V
A
A
A
W
W/°C
4 kV
4.5 V/ns
--
2500
V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb
Rthj-pcb
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max (1)
1. When mounted on minimum footprint
D²PAK
Value
Unit
TO-220 TO-220FP
1
30
4.2
62.5
°C/W
°C/W
°C/W
Doc ID 8799 Rev 3
3/19



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Electrical ratings
STB9NK60Z, STP9NK60Z, STP9NK60ZFP
Table 4. Avalanche characteristics
Symbol
Parameter
IAR Avalanche current, repetitive or not-repetitive(1)
EAS Single pulse avalanche energy (2)
1. Pulse width limited by Tj Max
2. Starting Tj=25 °C, ID=IAR, VDD=50 V
Value
7
235
Unit
A
mJ
4/19 Doc ID 8799 Rev 3




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