9N70 Datasheet PDF - Unisonic Technologies

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9N70
Unisonic Technologies

Part Number 9N70
Description N-CHANNEL POWER MOSFET
Page 4 Pages


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9N70
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 9N70 is a high voltage and high current power MOSFET
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) <1.3@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 10 pF)
* High switching Speed
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N70L-TA3-T
9N70G-TA3-T
9N70L-TF3-T
9N70G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
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Copyright © 2013 Unisonic Technologies Co., Ltd
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9N70
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage
VGSS ±30 V
Drain Current
Continuous TC=25°C
VGS @ 10V TC=100°C
ID
9A
5A
Pulsed (Note 2)
IDM
40 A
Avalanche Current
Avalanche Energy
Single Pulsed (Note 3)
Repetitive
Power Dissipation (TC=25°C)
TO-220
TO-220F
IAR
EAS
EAR
PD
9A
305 mJ
9 mJ
156
44
W
Linear Derating Factor
1.25 W/°C
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
3. Starting TJ=25°C, VDD=50V, L=6.8mH, RG=25, IAS=9A.
THERMAL DATA
PARAMETER
Junction to Ambien
Junction to Case
TO-220
TO-220F
TO-220
TO-220F
SYMBOL
θJA
θJC
RATINGS
62
62.5
0.8
2.86
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9N70
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
ID=1mA, VGS=0V
BVDSS/TJ Reference to 25°C, ID=1mA
IDSS
VDS=700V, VGS=0V, TJ=25°C
VDS=560V, VGS=0V, TJ=125°C
IGSS
VGS=+30V
VGS=-30V
700
V
0.6 V/°C
10 µA
100 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=4.5A
2 4V
1.1 1.25
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
1500
130
10
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 2)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=560V, ID=9A
VDD=350V, ID=9A, RG=10,
VGS=10V, RD=38
44 nC
11 nC
12 nC
19 ns
21 ns
56 ns
24 ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS VD=VG=0V, VS=1.5V
Maximum Body-Diode Pulsed Current (Note 1)
ISM
Drain-Source Diode Forward Voltage (Note 2)
VSD IS=9A, VGS=0V, TJ = 25°C
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width300µs, duty cycle2%.
9A
40 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9N70
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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9N70 N-CHANNEL POWER MOSFET 9N70
Unisonic Technologies
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